TPV593

TPV593 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV593 is a Common Emitter Device Designed for Class A High Linearity Television Band IV and V Transmitter Applications. PACKAGE STYLE .280 4L STUD FEATURES INCLUDE: Gold Metalization Emitter Ballasting High Gain MAXIMUM RATINGS IC VCB PDISS TJ T STG θ JC 1.2 A 45 V 17.5 W @ TC = 25 OC -55 OC to +200 OC -55 OC to +200 OC 10 OC/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BV CEO BV CBO BV EBO hFE Cob IC = 40 mA IC = 10 mA IE = 10 mA VCE = 5.0 V VCB = 28 V Po = 2.0 W PG TC = 25 OC NONE TEST CONDITIONS MINIMUM TYPICAL MAXIMUM 26 45 4.0 UNITS V V V --- IC = 250 mA f = 1.0 MHz SOUND CARRIER = -10 dB CHROMA = 16 dB 10 8.0 pF VISION CARRIER = -8.0 dB 10 12 dB VCE = 25 V Po = 2.0 W IMD3 IC = 410 mA f = 860 MHz -60 dBc VISION CARRIER = -8.0 dB SOUND CARRIER = -10 dB CHROMA = 16 dB VCE = 25 V IC = 410 mA f = 860 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...