TS7988

Ordering number :EN5959 NPN Triple Diffused Planar Silicon Transistor TS7988 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features High speed. High breakdown voltage (VCBO=1600V). High reliability (Adoption of HVP process). Adoption of MBIT process. Package Dimensions unit:mm 2039D-TO3PML [TS7988] ø3.4 16.0 5.6 3.1 5.0 8.0 21.0 22.0 4.0 2.8 2.0 2.0 20.4 1.0 0.6 1 2 3 5.45 5.45 1:Base 2:Collector 3:Emitter SANYO:TO-3PML Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Colletctor-to-Base Voltage Colletctor-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tc=25˚ C Tj Tstg Conditions Ratings 1600 800 6 10 25 3.0 70 150 –55 to +150 Unit V V V A A W W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Collector Cutoff Current Collector Sustain Voltage Emitter Cutoff Current DC Current Gain C-E Saturation Voltage B-E Saturation Voltage Storage Time Fall Time Symbol ICBO ICES IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) tstg tf VCE=800V, IE=0 VCE=1600V, RBE=0 800 1.0 15 4 30 7 5 1.5 3.0 0.2 V V µs µs VEB=4V, IC=0 VCE=5V, IC=1.0A VCE=5V, IC=7A IC=7A, IB=1.75A IC=7A, IB=1.75A IC=6A, IB1=1.0A, IB2=–2.5A IC=6A, IB1=1.0A, IB2=–2.5A Conditions Ratings min typ max 10 1.0 Unit µA mA V mA VCEO(sus) IC=100mA, IB=0 SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquart...