End of Life - Last Available Purchase Date: 11-October-2023 (PTN-OPT-1278-2023-REV-1)
www.vishay.com
TSFF5210
Vishay S...
End of Life - Last Available Purchase Date: 11-October-2023 (PTN-OPT-1278-2023-REV-1)
www.vishay.com
TSFF5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 870 nm, GaAlAs Double Hetero
DESCRIPTION
TSFF5210 is an infrared, 870 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
Package type: leaded Package form: T-1 3/4 Dimensions (in mm): Ø 5 Leads with stand-off Peak wavelength: λp = 870 nm High reliability High radiant power High radiant intensity Angle of half intensity: ϕ = ± 10°
Low forward
voltage Suitable for high pulse current operation High modulation bandwidth: fc = 24 MHz Good spectral matching with Si photodetectors Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
Infrared video data transmission between camcorder and TV set
Free air data transmission systems with high modulation frequencies or high data transmission rate requirements
Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT TSFF5210
Ie (mW/sr) 180
ϕ (°) ± 10
Note Test conditions see table “Basic Characteristics”
λp (nm) 870
tr (ns) 15
ORDERING INFORMATION
ORDERING CODE TSFF5210
Note MOQ: minimum order quantity
PACKAGING Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM T-1¾
Rev. 1.9, 28-Nov-2023
1
Document Number: 81090
For technical questions, contact: emittertechsupport...