TSG40N120CE

TSG40N120CE N-Channel IGBT with FRD. TO-264 Pin Definition: 1. Gate 2. Collector 3. Emitter PRODUCT SUMMARY VCES (V) 1200 VGES (V) ±20 IC (A) 40 General Description The TSG40N120CE using proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. Features ● ● ● 1200V NPT Trench Technology High Speed Switching Low Conduction Loss Block Diagram Ordering Information Part No. TSG40N120CE C0 Package TO-264 Packing 25pcs / Tube NPT Trench IGBT Absolute Maximum Rating (TA=25oC unless otherwise noted) Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Current Pulsed Collector Current * Diode Forward Current (TC=100℃) Diode Pulse Forward Current Max Power Dissipation Operating Junction Temperature Storage Temperature Range * Repetitive rating: Pulse width limited by max. junction temperature TJ=25 C TJ=100 C o o Symbol VCES VGES TC=25 C TC=100 C o o Limit 1200 ±20 64 Unit V V A A A A A W IC ICM IF IFM PD TJ TSTG 40 120 40 240 208 83 -55 to +150 -55 to +150 ºC o C 1/10 Version: B12 TSG40N120CE N-Channel IGBT with FRD. Thermal Performance Parameter Thermal Resistance - Junction to Case Thermal Resistance - Junction to Ambient IGBT DIODE Symbol RӨJC RӨJA Limit 0.6 2.2 25 Unit o C/W Electrical Specificatio...