TSHA440

TSHA440. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 3 mm (T–1) Package Description The TSHA44..series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 50 % radiant power improvement. 94 8398 Features D Extra high radiant power D High radiant intensity for long transmission distance D Suitable for high pulse current operation D Standard T–1(ø 3 mm) package for low space application D D D D Angle of half intensity ϕ = ± 20° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors Applications Infrared remote control and free air transmission systems with high power requirements in combination with PIN photodiodes or phototransistors. Because of the very low radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2 180 100 –55...+100 –55...+100 260 450 Unit V mA mA A mW °C °C °C °C K/W tp/T = 0.5...