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TSHA5203 Datasheet

Part Number TSHA5203
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
Datasheet TSHA5203 DatasheetTSHA5203 Datasheet (PDF)

TSHA520. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features D D D D D D D Extra high radiant power and radiant intensity Suitable for high pulse current operation Standard.

  TSHA5203   TSHA5203






Part Number TSHA5202
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
Datasheet TSHA5203 DatasheetTSHA5202 Datasheet (PDF)

TSHA520. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features D D D D D D D Extra high radiant power and radiant intensity Suitable for high pulse current operation Standard.

  TSHA5203   TSHA5203







Part Number TSHA5201
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
Datasheet TSHA5203 DatasheetTSHA5201 Datasheet (PDF)

TSHA520. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features D D D D D D D Extra high radiant power and radiant intensity Suitable for high pulse current operation Standard.

  TSHA5203   TSHA5203







Part Number TSHA5200
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
Datasheet TSHA5203 DatasheetTSHA5200 Datasheet (PDF)

TSHA520. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features D D D D D D D Extra high radiant power and radiant intensity Suitable for high pulse current operation Standard.

  TSHA5203   TSHA5203







Part Number TSHA520
Manufacturers Vishay Telefunken
Logo Vishay Telefunken
Description GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package
Datasheet TSHA5203 DatasheetTSHA520 Datasheet (PDF)

TSHA520. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features D D D D D D D Extra high radiant power and radiant intensity Suitable for high pulse current operation Standard.

  TSHA5203   TSHA5203







GaAlAs Infrared Emitting Diodes in 5 mm (T-13/4) Package

TSHA520. Vishay Telefunken GaAlAs Infrared Emitting Diodes in ø 5 mm (T–1¾) Package Description The TSHA520. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package. In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement. 94 8390 Features D D D D D D D Extra high radiant power and radiant intensity Suitable for high pulse current operation Standard T–1¾ (ø 5 mm) package Angle of half intensity ϕ = ± 12° Peak wavelength lp = 875 nm High reliability Good spectral matching to Si photodetectors Applications Infrared remote control and free air transmission systems with high power and long transmission distance requirements in combination with PIN photodiodes or phototransistors. Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector. Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 2.5 210 100 –55...+100 –55...+100 260 350 Unit V mA mA A mW °C °C °C °C K/W tp/T = 0.5, tp = 100 ms tp = 100 ms .


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