www.vishay.com
TSHG5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
94 839...
www.vishay.com
TSHG5210
Vishay Semiconductors
High Speed Infrared Emitting Diode, 850 nm, GaAlAs Double Hetero
94 8390
DESCRIPTION TSHG5210 is an infrared, 850 nm emitting diode in GaAlAs double hetero (DH) technology with high radiant power and high speed, molded in a clear, untinted plastic package.
FEATURES
Package type: leaded Package form: T-1¾ Dimensions (in mm): Ø 5
Leads with stand-off Peak wavelength: p = 850 nm High reliability High radiant power High radiant intensity Angle of half intensity: = ± 10°
Low forward
voltage
Suitable for high pulse current operation
High modulation bandwidth: fc = 18 MHz Good spectral matching with
CMOS cameras
Compliant to RoHS Directive 2002/95/EC and accordance to WEEE 2002/96/EC
Note
** Please see document “Vishay Material Category Policy”:
www.vishay.com/doc?99902
APPLICATIONS
in
Infrared radiation source for operation with
CMOS cameras
High speed IR data transmission
Smoke-automatic fire detectors
PRODUCT SUMMARY
COMPONENT TSHG5210
Ie (mW/sr) 230
Note Test conditions see table “Basic Characteristics”
(deg) ± 10
p (nm) 850
tr (ns) 20
ORDERING INFORMATION
ORDERING CODE TSHG5210
Note MOQ: minimum order quantity
PACKAGING Bulk
REMARKS MOQ: 4000 pcs, 4000 pcs/bulk
PACKAGE FORM T-1¾
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Reverse
voltage Forward current Peak forward current Surge forward current Power dissipati...