TSTS7303

TSTS730. Vishay Telefunken GaAs IR Emitting Diodes in Hermetically Sealed TO18 Case Description The TSTS730. series are infrared emitting diodes in standard GaAs technology in a hermetically sealed TO–18 package. Their glass lenses provide a high radiant intensity without external optics. Features D D D D D D High radiant intensity Suitable for pulse operation Angle of half intensity ϕ = ± 12° Peak wavelength lp = 950 nm High reliability Good spectral matching to Si photodetectors 94 8642 Applications Radiation source in near infrared range Absolute Maximum Ratings Tamb = 25_C Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Storage Temperature Range Thermal Resistance Junction/Ambient Thermal Resistance Junction/Case Test Conditions Tcase 25 °C tp/T = 0.5, tp 100 ms, Tcase 25 °C tp 100 ms Symbol VR IF IFM IFSM PV PV Tj Tstg RthJA RthJC Value 5 250 500 2.5 170 500 100 –55...+100 450 150 Unit V mA mA A mW mW °C °C K/W K/W x x x x Tcase x 25 °C Document Number 81048 Rev. 2, 20-May-99 www.vishay.de FaxBack +1-408-970-5600 1 (5) TSTS730. Vishay Telefunken Basic Characteristics Tamb = 25_C Parameter Forward Voltage Breakdown Voltage Junction Capacitance Radiant Power Temp. Coefficient of fe Angle of Half Intensity Peak Wavelength Spectral Bandwidth Rise Time Fall Time Test Conditions IF = 100 mA, tp 20 ms IR = 100 mA VR = 0 V, f = 1 MHz, E = 0 IF = 100 mA, tp 20 ms IF = 100 mA x x Symbol VF ...