TSU60R2K3S1

TSD60R2K3S1/TSU60R2K3S1 600V 2.3A N-Channel SJ-MOSFET TSD60R2K3S1/TSU60R2K3S1 600V 2.3A N-Channel SJ-MOSFET General Description Features Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. SJ-FET is suitable for various AC/DC power conversion in switching mode operation for higher efficiency. 650V @TJ = 150 ℃ Typ. RDS(on) = 1.9Ω Ultra Low gate charge (typ. Qg = 7nC) 100% avalanche tested TSD60R2K3S1 TSU60R2K3S1 TO-252 Absolute Maximum Ratings TO-251 Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current – Pulsed (Note 1) Gate-Source voltage Single Pu...