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TTD1415B Datasheet

Part Number TTD1415B
Manufacturers Inchange
Logo Inchange
Description Silicon NPN Power Transistor
Datasheet TTD1415B DatasheetTTD1415B Datasheet (PDF)

isc Silicon NPN Darlington Power Transistor TTD1415B DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Complement to Type TTB1020B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V V.

  TTD1415B   TTD1415B






Part Number TTD1415B
Manufacturers Toshiba
Logo Toshiba
Description Silicon NPN Transistor
Datasheet TTD1415B DatasheetTTD1415B Datasheet (PDF)

Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1415B TTD1415B 1. Applications • High-Power Switching • Hammer Drivers 2. Features (1) High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A) (2) Low collector-emitter saturation voltage: VCE(sat) = 1.5 V (max) (IC = 3 A , IB = 6 mA) (3) Complementary to TTB1020B 3. Packaging and Internal Circuit TO-220SIS 1. Base 2. Collector 3. Emitter ©2015 Toshiba Corporation 1 Start of commercial production 2012-09 2015-08-06 Rev.3.0 TTD1.

  TTD1415B   TTD1415B







Silicon NPN Power Transistor

isc Silicon NPN Darlington Power Transistor TTD1415B DESCRIPTION ·High DC Current Gain- : hFE = 2000(Min)@ IC= 3A ·Low Collector-Emitter Saturation Voltage- : VCE(sat) = 1.5V(Max)@ IC= 3A ·Complement to Type TTB1020B ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 7 A ICM Collector Current-Peak PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 10 A 25 W 150 ℃ Tstg Storage Temperature Range -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 5.0 ℃/W isc website:www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA, IB= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 6A, IB= 6mA VBE(sat) Base-emitter saturation voltage IC= 6A, IB= 6mA ICBO Collector Cutoff Current VCB= 120V, IE= 0 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 hFE-1 DC Current Gain IC= 3A; VCE= 3V hFE-2 DC Current Gain IC= 6A; VCE= 3V TTD1415B MIN MAX UNIT 100 V 1.5 V 2..


2021-05-08 : DSEI12-06A    PSD25-16    TTD1415B    TTD1415B    2SD1816L    88E1510    88E1514    88E1545    88E2110    88E2180   


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