Triac. TXDV812 Datasheet

TXDV812 Datasheet PDF

Part TXDV812
Description Triac
Feature Features ■ On-state current (IT(RMS)): 12 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate curre.
Manufacture STMicroelectronics
Datasheet
Download TXDV812 Datasheet

Features ■ On-state current (IT(RMS)): 12 A ■ Max. blocking TXDV812 Datasheet
isc Thyristors INCHANGE Semiconductor TXDV812 DESCRIPTION TXDV812 Datasheet




TXDV812
Features
On-state current (IT(RMS)): 12 A
Max. blocking voltage (VDRM/VRRM): 1200 V
Gate current (IGT): 100 mA
Commutation @ 10 V/µs: up to 42.5 A/ms
Noise immunity: 2 kV/µs
Insulated package:
– 2,500 V rms (UL recognized: E81734).
Description
The TXDVxx12 series uses a high performance
alternistor technology.
Featuring very high commutation levels and high
surge current capability, these devices are well
adapted to power control for inductive and
resistive loads (motor, transformer...) especially
on three-phase power grid. Targeted three-phase
applications include heating systems, motor
starters, and induction motor speed control
(especially for fans).
Table 1. Device summary
Parameter
TXDV812RG
Blocking voltage VDRM/VRRM
On-state current IT(RMS)
Gate current IGT
800 V
TXDVxx12
12 A high voltage Triacs
A2
G
A1
A1
A2
G
TO-220AB
insulated
12 A
100 mA
TXDV1212RG
1200 V
January 2012
Doc ID 18272 Rev 2
1/7
www.st.com
7



TXDV812
Characteristics
1
Characteristics
TXDVxx12
Table 2. Absolute maximum ratings (limiting values)
Symbol
Parameter
IT(RMS)
VDRM
VRRM
On-state rms current (180° conduction angle)
Repetitive peak off-state voltage
TXDV812
TXDV1212
tp = 2.5 ms
ITSM Non repetitive surge peak on-state current tp = 8.3 ms
I2t
I2t value for fusing
tp = 10 ms
tp = 10 ms
dI/dt
Critical rate of rise of on-state current
IG = 500 mA dIG/dt = 1 A/µs
F = 50 Hz
Tstg
Storage junction temperature range
Tj
Operating junction temperature range
VINS(RMS)(1) Insulation rms voltage
1. A1, A2, gate terminals to case for 1 minute
Tc = 90 °C
Tj = 125 °C
Tj = 25 °C
Value
12
800
1200
170
125
120
72
100
- 40 to + 150
- 40 to + 125
2500
Unit
A
V
A
A2S
A/µs
°C
V
Table 3.
Symbol
Electrical characteristics (Tj = 25 °C, unless otherwise specified)
Test conditions
Quadrant
Value
Unit
TXDV812 TXDV1212
IGT
VGT
VD = 12 V DC, RL = 33 Ω
VGD
VD = VDRM RL = 3.3 kΩ
Tj = 110 °C
tgt
VD = VDRM IG = 500 mA dIG/dt = 3 A/µs
IL
IG = 1.2 x IGT
IH (1) IT = 500 mA Gate open
dV/dt (1)
Linear slope up to:
VD = 67% VDRM Gate open
(dI/dt)c (1) (dV/dt)c = 10 V/µs
VTM (1)
Vto (1)
Rd (1)
ITM = 17 A tp = 380 µs
Threshold voltage
Dynamic resistance
IDRM
IRRM
VDRM = VRRM
Tj = 125 °C
Tj = 110 °C
Tj = 25 °C
Tj = 110 °C
I-II-III
I-II-III
I-II-III
I-II-III
I-III
II
1. For either polarity of electrode A2 voltage with reference to electrode A1.
MAX.
MAX.
MIN.
TYP.
TYP.
MAX.
MIN.
MIN.
MAX.
MAX.
MAX.
MAX.
100
1.5
0.2
2.5
100
200
100
2
42.5
30
1.95
1.21
40
0.01
2
5
mA
V
V
µs
mA
mA
kV/µs
A/ms
V
V
mΩ
mA
2/7
Doc ID 18272 Rev 2




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