DatasheetsPDF.com

TXDV812 Datasheet

Part Number TXDV812
Manufacturers STMicroelectronics
Logo STMicroelectronics
Description Triac
Datasheet TXDV812 DatasheetTXDV812 Datasheet (PDF)

Features ■ On-state current (IT(RMS)): 12 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 100 mA ■ Commutation @ 10 V/µs: up to 42.5 A/ms ■ Noise immunity: 2 kV/µs ■ Insulated package: – 2,500 V rms (UL recognized: E81734). Description The TXDVxx12 series uses a high performance alternistor technology. Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transforme.

  TXDV812   TXDV812






Part Number TXDV812
Manufacturers INCHANGE
Logo INCHANGE
Description Thyristor
Datasheet TXDV812 DatasheetTXDV812 Datasheet (PDF)

isc Thyristors INCHANGE Semiconductor TXDV812 DESCRIPTION ·With TO-220 packaging ·High operating junction temperature ·Very high commutation performancemaximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDRM VRRM IT(RMS) ITSM PG(AV) Repetitiv.

  TXDV812   TXDV812







Triac

Features ■ On-state current (IT(RMS)): 12 A ■ Max. blocking voltage (VDRM/VRRM): 1200 V ■ Gate current (IGT): 100 mA ■ Commutation @ 10 V/µs: up to 42.5 A/ms ■ Noise immunity: 2 kV/µs ■ Insulated package: – 2,500 V rms (UL recognized: E81734). Description The TXDVxx12 series uses a high performance alternistor technology. Featuring very high commutation levels and high surge current capability, these devices are well adapted to power control for inductive and resistive loads (motor, transformer...) especially on three-phase power grid. Targeted three-phase applications include heating systems, motor starters, and induction motor speed control (especially for fans). Table 1. Device summary Parameter TXDV812RG Blocking voltage VDRM/VRRM On-state current IT(RMS) Gate current IGT 800 V TXDVxx12 12 A high voltage Triacs A2 G A1 A1 A2 G TO-220AB insulated 12 A 100 mA TXDV1212RG 1200 V January 2012 Doc ID 18272 Rev 2 1/7 www.st.com 7 Characteristics 1 Characteristics TXDVxx12 Table 2. Absolute maximum ratings (limiting values) Symbol Parameter IT(RMS) VDRM VRRM On-state rms current (180° conduction angle) Repetitive peak off-state voltage TXDV812 TXDV1212 tp = 2.5 ms ITSM Non repetitive surge peak on-state current tp = 8.3 ms I2t I2t value for fusing tp = 10 ms tp = 10 ms dI/dt Critical rate of rise of on-state current IG = 500 mA dIG/dt = 1 A/µs F = 50 Hz Tstg Storage junction temperature range Tj Operating junction temperature range VINS(RMS)(.


2005-04-16 : LA5603    MLED930    M38198    BU2527A    F4500    ES07D    FDI047AN08A0    FMMT2484    FQP90N10V2    FQPF90N10V2   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)