TYN12B-600LT

TYN12B-600LT SCR Rev. 01 19 February 2019 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a TO-263 surface mountable plastic package intended for use in applications requiring good bidirectional blocking voltage and high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits Good bidirectional blocking voltage capability High current surge capability High thermal cycling performance Surface mountable package Planar passivated for voltage ruggedness and reliability High junction operating temperature capability (Tj(max) = 150 °C) 3. Applications Capacitive Discharge Ignition (CDI) Crowbar protection Inrush protection Motor control Voltage regulation High junction operating temperature capability (Tj(max) = 150 °C) 4. Quick reference data Table 1. Quick reference data Symbol Parameter Absolute maximum rating VRRM repetitive peak reverse voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current Tj junction temperature Conditions half sine wave; Tmb ≤ 136 °C; Fig. 1; Fig. 2; Fig. 3 half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig. 4; Fig. 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Values 650 12 120 132 150 Unit V A A A °C WeEn Semiconductors Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage Dynamic characteristics ...