TYN30Y-800T
SCR
Rev.02 - 14 October 2022
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).
2. Features and benefits
• AC power control • High blocking voltage capability • High thermal cycling performance • Planar passivated for voltage ruggedness a.
SCR
TYN30Y-800T
SCR
Rev.02 - 14 October 2022
Product data sheet
1. General description
Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C).
2. Features and benefits
• AC power control • High blocking voltage capability • High thermal cycling performance • Planar passivated for voltage ruggedness and reliability • High immunity to false turn-on by dV/dt • Internally insulated package • Internally isolated mounting base • High junction operating temperature capability (Tj(max) = 150 °C) • Package meets UL94V0 flammability requirement • Package is RoHS compliant • IEC 61000-4-4 fast transient
3. Applications
• Capacitive Discharge Ignition (CDI) • Crowbar protection • Inrush protection • Motor control • Voltage regulation
4. Quick reference data
Table 1. Quick reference data Symbol Parameter
Conditions
VDRM IT(RMS) ITSM
repetitive peak off-state voltage RMS on-state current
non-repetitive peak onstate current
half sine wave; Tmb ≤ 114 °C; Fig. 1; Fig. 2; Fig. 3
half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig 4; Fig 5
half sine wave; Tj(init) = 25 °C; tp = 8.3 ms
Tj
junction temperature
Values
Unit
800
V
30
A
350
A
385
A
150
°C
WeEn Semiconductors
Symbol Parameter Static characteristics
IGT
gate trigger current
IH
holding current
VT
on-state voltage
.