DatasheetsPDF.com

TYN30Y-800T Datasheet

Part Number TYN30Y-800T
Manufacturers WeEn
Logo WeEn
Description SCR
Datasheet TYN30Y-800T DatasheetTYN30Y-800T Datasheet (PDF)

TYN30Y-800T SCR Rev.02 - 14 October 2022 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits • AC power control • High blocking voltage capability • High thermal cycling performance • Planar passivated for voltage ruggedness a.

  TYN30Y-800T   TYN30Y-800T






SCR

TYN30Y-800T SCR Rev.02 - 14 October 2022 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a IITO220 plastic package intended for use in applications requiring very high inrush current capability, high thermal cycling performance and high junction temperature capability (Tj(max) = 150 °C). 2. Features and benefits • AC power control • High blocking voltage capability • High thermal cycling performance • Planar passivated for voltage ruggedness and reliability • High immunity to false turn-on by dV/dt • Internally insulated package • Internally isolated mounting base • High junction operating temperature capability (Tj(max) = 150 °C) • Package meets UL94V0 flammability requirement • Package is RoHS compliant • IEC 61000-4-4 fast transient 3. Applications • Capacitive Discharge Ignition (CDI) • Crowbar protection • Inrush protection • Motor control • Voltage regulation 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM IT(RMS) ITSM repetitive peak off-state voltage RMS on-state current non-repetitive peak onstate current half sine wave; Tmb ≤ 114 °C; Fig. 1; Fig. 2; Fig. 3 half sine wave; Tj(init) = 25 °C; tp = 10 ms; Fig 4; Fig 5 half sine wave; Tj(init) = 25 °C; tp = 8.3 ms Tj junction temperature Values Unit 800 V 30 A 350 A 385 A 150 °C WeEn Semiconductors Symbol Parameter Static characteristics IGT gate trigger current IH holding current VT on-state voltage .


2020-06-25 : BYV96E    BYV36A    BYC405X-400P    BTA140-600G0T    ACTT4X-800C    ACTT2X-800E    RT9081A    BYC75W-600PT2    BT151Y-650LTN    WNSC101200   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)