TZX2V4B Datasheet
Part Number |
TZX2V4B |
Manufacturers |
MCC |
Logo |
|
Description |
500mW Silicon Zener Diodes |
Datasheet |
TZX2V4B Datasheet (PDF) |
MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
x Very sharp reverse characteristic x Low reverse current level x Very high stability x available with tighter tolerances • Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Mechanical Data
x Case: Standard Glass Case • Marking : Cathode band and type number • Moisture Sensitivity Level 1
TZX2V4 THRU TZX36
500mW Silicon Zener Diodes
DO-35
Maximum Ratings*
Max. Steady State Power Dissipation at TL=25OC, I=4mm Junction Temperature Storage Temperature Range Thermal Resistance( Junction to Ambient)
Symbol
Value
PD 500
TJ TSTG
RthJA
175 -65 to 175
300
Units
mW
к к K/W
D
A Cathode Mark B
D
C
Electrical Characteristics @ 25qC Unless Otherwise Specified
Symbol Maximum
Unit
Max. Forward Voltage @ IF=100mA
VF
1.5
V
Note: 1. Lead in Glass Exemption Applied, se.
Part Number |
TZX2V4B |
Manufacturers |
Vishay |
Logo |
|
Description |
Small Signal Zener Diodes |
Datasheet |
TZX2V4B Datasheet (PDF) |
www.vishay.com
TZX-Series
Vishay Semiconductors
Small Signal Zener Diodes
FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • AEC-Q101 qualified • Material categorization:
For definitions of compliance please see www.vishay.com/doc?99912
APPLICATIONS • Voltage stabilization
PRIMARY CHARACTERISTICS
PARAMETER
VALUE
VZ range nom. Test current IZT VZ specification Int. construction
2.4 to 36 2; 5
Pulse current Single
UNIT V mA
ORDERING INFORMATION
DEVICE NAME
ORDERING CODE
TZX-series
TZX-series-TAP
TZX-series
TZX-series-TR
TAPED UNITS PER REEL
10 000 per ammopack (52 mm tape)
10 000 per 14" reel (52 mm tape)
MINIMUM ORDE.
Part Number |
TZX2V4B |
Manufacturers |
Diodes Incorporated |
Logo |
|
Description |
500mW EPITAXIAL PLANAR ZENER DIODE |
Datasheet |
TZX2V4B Datasheet (PDF) |
TZX2V4 - TZX36C
500mW EPITAXIAL PLANAR ZENER DIODE Features
· · · Planar Die Construction 500mW Power Dissipation on FR-4 PCB General Purpose, Medium Current
A
PRELIMINARY
B
A
Mechanical Data
· · · · · Case: DO-35, Glass Leads: Solderable per MIL-STD-202, Method 208 Marking: Type Number Polarity: Cathode Band Weight: 0.35 grams (approx.)
DO-35 Dim A B C D Min 25.40 ¾ ¾ ¾
D
C
Max ¾ 4.00 0.60 2.00
All Dimensions in mm
Maximum Ratings
@ TA = 25°C unless otherwise specified Symbol ¾ @ IF = 200mA VF Pd RqJA Tj, TSTG Value ¾ 1.5 500 300 -65 to +175 Unit ¾ V mW K/W °C
Characteristic Zener Current (See Table on page 2) Forward Voltage Power Dissipation (Note 1) Thermal Resistance, Junctio.
500mW Silicon Zener Diodes
MCC
TM
Micro Commercial Components
omponents 20736 Marilla Street Chatsworth !"# $
% !"#
Features
x Very sharp reverse characteristic x Low reverse current level x Very high stability x available with tighter tolerances • Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Mechanical Data
x Case: Standard Glass Case • Marking : Cathode band and type number • Moisture Sensitivity Level 1
TZX2V4 THRU TZX36
500mW Silicon Zener Diodes
DO-35
Maximum Ratings*
Max. Steady State Power Dissipation at TL=25OC, I=4mm Junction Temperature Storage Temperature Range Thermal Resistance( Junction to Ambient)
Symbol
Value
PD 500
TJ TSTG
RthJA
175 -65 to 175
300
Units
mW
к к K/W
D
A Cathode Mark B
D
C
Electrical Characteristics @ 25qC Unless Otherwise Specified
Symbol Maximum
Unit
Max. Forward Voltage @ IF=100mA
VF
1.5
V
Note: 1. Lead in Glass Exemption Applied, se.
2017-12-26 : GBPC1506 GBPC2506 GBPC3506 GBPC4006 GBPC1006 GBPC1002 GBPC5001 GBPC1502 GBPC2502 GBPC4002