U202

n-channel JFETs designed for Analog Switches Commutators Choppers H Siliconix Performance Curves NCB See Section 4 BENEFITS Low Insertion Loss rOS(on) < 50 on (U202) Good Off-Isolation 10(off) < 1 nA ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain or Gate-Source Voltage ............... -30 V Gate Current .............................. SOmA Total Device Dissipation at 25°C Case Temperature (Derate 10 mWrC) ......................... 1.8W Storage Temperature Range .............. -65 to +200°C Lead Temperature (1/16" from case for 10 seconds) ............. 300°C TO-tS See Section 6 .~: j \G.C 0 ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic 1 1-"2 -3 S T -4 A T -5 i C 6 IGSS BVGSS VGS(off) 10(011) lOSS Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Dram Cutoff Current Saturation Drain Current (Note 1) -7 rds(on) -8 0 Y C1SS N 9 Crss Draln-~ource ON Resistance Common-Source Input Capacitance (Note 1) Common-Source Reverse Transfer Capacitance U200 Min Max -1 -1 -30 -0.5 -3 1 1 U201 Min Max -I -1 -30 -1.5 -5 i 1 U202 Min Max -I -1 -30 -3.5 -10 1 1 Unit nA JlA V nA JlA Test Conditions VGS = -20 V, VOS = 0 IG=-IJlA,VOS=O VOS = 20 V, 10 = 10 nA I 150°C VOS = 10 V, VGS = -12 V 150°C 3 25 15 75 30 150 mA VOS = 20 V, VGS = 0 150 75 50 ohm VGS = 0,10 = 0 f = 1 kHz 30 30 88 30 VOS=20V,VGS=0 pF 8 VOS=O VGS=-12V f= 1 MHz NOTE: 1. Pu1se test required, pulsew,dth = 300 Jlsec, duty cycle ....