U306

p-channel JFETs designed for Analog Switches Commutators Choppers H Siliconix Performance Curves PSA/PSB/PSC See Section 4 BENEFITS Low Insertion Loss rDSlon) < 85 n (U304) High Off-Isolation ID(off) < 500 pA ABSOLUTE MAXIMUM RATINGS (25°C) Reverse Gate-Drain or Gate-Source Voltage (Note 1) .. 30V Gate Current ............................... 50mA Total Device Dissipation, Free-Air (Derate 2.8 mW/oC) ....................... 350mW Storage Temperature Range .............. -65 to +200°C Lead Temperature (1/16" from case for 60 seconds) ............ . 300°C TO-18 See Section 6 .~: U ~;rr D G~C ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted) Characteristic 1 12" IGSS 3- ' ~ :: T 5A T 6- ' I C -7 8 BVGSS VGSlnffl VOS(on) lOSS I o(off) "9 'OS(on) 10 'ds(on) 22: 0 CISS Y 12 N Crss Gate Reverse Current Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Drain-Source ON Voltage SaturatIon Drain Current (Note 2) Drain Cutoff Current Static Dram-Source ON Resistance Drain-Source ON ReSistance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance 13 S td(on) 14 W I t, 15 T 1e c H teI(off) tf Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time U304 Min Max 500 10 30 5 10 -1.3 -30 -90 -500 -1.0 B5 85 27 7 20 15 10 25 U305 Min Max 500 1.0 30 36 -0.8 -15 -60 -500 -1.0 110 110 27 7 25 25 15 40 U306 Unit Min Max 500 pA 1.0 p.A 30 11 V -0.6 -5 -25 mA -500 pA -1.0 p.A 175 n 175 n 27 pF 7 25 35 ns 20 60 ...