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U321 Datasheet

Part Number U321
Manufacturers Siliconix
Logo Siliconix
Description n-channel JFET
Datasheet U321 DatasheetU321 Datasheet (PDF)

  U321   U321
n-channel JFETs designed for • • • • VHF BuRer Amplifiers • IF Amplifiers - H Siliconix - --- ----- Performance Curves NIP See Section 4 BENEFITS • High Gain gfs = 120,000 ,umho Typical • Wide Dynamic Range • Low Intermodulation Distortion c W oN c W •N c W N N ABSOLUTE MAXIMUM RATINGS (2S0C) Gate·Drain or Gate·Source Voltage .-25 V Gate Current . 100 rnA Total Device Dissipation (25°C Case Temperature) .3 W Power Derating (to 150°C) ... 24 mWrC Storage Temperature Range .... -55 to +150°C Operating Temperature Range... -55 to +150°C Lead Temperature (1/16" from case for 10 seconds) 300°C TO-39 See Section 6 .~: ~ l s0 ELECTRICAL CHARACTERISTICS (2S0C unless otherwise noted) Characteristic U320 U321 U322 Umt Min Typ Max Min Typ Max M,n Typ Max rest Conditions 1 -I I~ s I"; 4 T A 15 T I6 I e I] IGSS VGSloffl BVGSS lOSS VGS(I) 'OS(on) Gate Reverse Current (Note .






Part Number U3280M
Manufacturers ATMEL Corporation
Logo ATMEL Corporation
Description Transponder Interface
Datasheet U321 DatasheetU3280M Datasheet (PDF)

  U321   U321
Features • • • • • • • • • • • www.DataSheet4U.com Contactless Power Supply and Communication Interface Up to 10 kbaud Data Rate (R/O) Power Management for Contactless and Battery Power Supply Frequency Range 100 kHz to 150 kHz 32 x 16-bit EEPROM Two-wire Serial Interface Shift Register Supported Bi-phase and Manchester Modulator Stage Reset I/O Line Field Clock Extractor Field and Gap Detection Output for Wake-up and Data Reception Field Modulator with Energy-saving Damping Stage Applications • Main Areas – Access Control – Telemetry – Wireless Sensors • Examples: – Wireless Passive Access and Active Alarm Control for Protection of Valuables – Contactless Position Sensors for Alignments of.






Part Number U322
Manufacturers Siliconix
Logo Siliconix
Description n-channel JFET
Datasheet U321 DatasheetU322 Datasheet (PDF)

  U321   U321
n-channel JFETs designed for • • • • VHF BuRer Amplifiers • IF Amplifiers - H Siliconix - --- ----- Performance Curves NIP See Section 4 BENEFITS • High Gain gfs = 120,000 ,umho Typical • Wide Dynamic Range • Low Intermodulation Distortion c W oN c W •N c W N N ABSOLUTE MAXIMUM RATINGS (2S0C) Gate·Drain or Gate·Source Voltage .-25 V Gate Current . 100 rnA Total Device Dissipation (25°C Case Temperature) .3 W Power Derating (to 150°C) ... 24 mWrC Storage Temperature Range .... -55 to +150°C Operating Temperature Range... -55 to +150°C Lead Temperature (1/16" from case for 10 seconds) 300°C TO-39 See Section 6 .~: ~ l s0 ELECTRICAL CHARACTERISTICS (2S0C unless otherwise noted) Char.






Part Number U320
Manufacturers Siliconix
Logo Siliconix
Description n-channel JFET
Datasheet U321 DatasheetU320 Datasheet (PDF)

  U321   U321
n-channel JFETs designed for • • • • VHF BuRer Amplifiers • IF Amplifiers - H Siliconix - --- ----- Performance Curves NIP See Section 4 BENEFITS • High Gain gfs = 120,000 ,umho Typical • Wide Dynamic Range • Low Intermodulation Distortion c W oN c W •N c W N N ABSOLUTE MAXIMUM RATINGS (2S0C) Gate·Drain or Gate·Source Voltage .-25 V Gate Current . 100 rnA Total Device Dissipation (25°C Case Temperature) .3 W Power Derating (to 150°C) ... 24 mWrC Storage Temperature Range .... -55 to +150°C Operating Temperature Range... -55 to +150°C Lead Temperature (1/16" from case for 10 seconds) 300°C TO-39 See Section 6 .~: ~ l s0 ELECTRICAL CHARACTERISTICS (2S0C unless otherwise noted) Char.






n-channel JFET

n-channel JFETs designed for • • • • VHF BuRer Amplifiers • IF Amplifiers - H Siliconix - --- ----- Performance Curves NIP See Section 4 BENEFITS • High Gain gfs = 120,000 ,umho Typical • Wide Dynamic Range • Low Intermodulation Distortion c W oN c W •N c W N N ABSOLUTE MAXIMUM RATINGS (2S0C) Gate·Drain or Gate·Source Voltage .-25 V Gate Current . 100 rnA Total Device Dissipation (25°C Case Temperature) .3 W Power Derating (to 150°C) ... 24 mWrC Storage Temperature Range .... -55 to +150°C Operating Temperature Range... -55 to +150°C Lead Temperature (1/16" from case for 10 seconds) 300°C TO-39 See Section 6 .~: ~ l s0 ELECTRICAL CHARACTERISTICS (2S0C unless otherwise noted) Characteristic U320 U321 U322 Umt Min Typ Max Min Typ Max M,n Typ Max rest Conditions 1 -I I~ s I"; 4 T A 15 T I6 I e I] IGSS VGSloffl BVGSS lOSS VGS(I) 'OS(on) Gate Reverse Current (Note 1) Gate-Source Cutoff Voltage Gate-Source Breakdown Voltage Saturation Drain Current (Note 21 Gate-Source Forward Voltage Drain-Source ON ReSistance -2 -25 100 -3 -0 5 -10 500 1 10 8 9fs 1- 9 0 C1SS I- V 10 N A Crss 111 112 I':':: M I e Cas Cgd 13 -en Common-Source Forward Transconductance (Note 21 Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Gate-Source Capacitance Gate-Drain Capacitance EqUivalent Short CirCUit Input NOise Voltage 75 120 200 30 15 1.



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