U321 Datasheet
Part Number |
U321 |
Manufacturers |
Siliconix |
Logo |
|
Description |
n-channel JFET |
Datasheet |
U321 Datasheet (PDF) |
n-channel JFETs
designed for • • •
• VHF BuRer Amplifiers • IF Amplifiers
-
H
Siliconix
- ---
-----
Performance Curves NIP See Section 4
BENEFITS
• High Gain gfs = 120,000 ,umho Typical
• Wide Dynamic Range • Low Intermodulation Distortion
c
W
oN
c
W
•N
c
W N N
ABSOLUTE MAXIMUM RATINGS (2S0C)
Gate·Drain or Gate·Source Voltage .-25 V Gate Current . 100 rnA Total Device Dissipation (25°C Case Temperature) .3 W Power Derating (to 150°C) ... 24 mWrC Storage Temperature Range .... -55 to +150°C Operating Temperature Range... -55 to +150°C Lead Temperature
(1/16" from case for 10 seconds) 300°C
TO-39 See Section 6
.~:
~
l s0
ELECTRICAL CHARACTERISTICS (2S0C unless otherwise noted)
Characteristic
U320
U321
U322
Umt
Min Typ Max Min Typ Max M,n Typ Max
rest Conditions
1 -I
I~ s
I";
4
T A
15 T
I6
I
e
I]
IGSS
VGSloffl BVGSS lOSS VGS(I) 'OS(on)
Gate Reverse Current (Note .
Part Number |
U3280M |
Manufacturers |
ATMEL Corporation |
Logo |
|
Description |
Transponder Interface |
Datasheet |
U3280M Datasheet (PDF) |
Features
• • • • • • • • • • •
www.DataSheet4U.com Contactless Power Supply and Communication Interface Up to 10 kbaud Data Rate (R/O) Power Management for Contactless and Battery Power Supply Frequency Range 100 kHz to 150 kHz 32 x 16-bit EEPROM Two-wire Serial Interface Shift Register Supported Bi-phase and Manchester Modulator Stage Reset I/O Line Field Clock Extractor Field and Gap Detection Output for Wake-up and Data Reception Field Modulator with Energy-saving Damping Stage
Applications
• Main Areas
– Access Control – Telemetry – Wireless Sensors • Examples: – Wireless Passive Access and Active Alarm Control for Protection of Valuables – Contactless Position Sensors for Alignments of.
Part Number |
U322 |
Manufacturers |
Siliconix |
Logo |
|
Description |
n-channel JFET |
Datasheet |
U322 Datasheet (PDF) |
n-channel JFETs
designed for • • •
• VHF BuRer Amplifiers • IF Amplifiers
-
H
Siliconix
- ---
-----
Performance Curves NIP See Section 4
BENEFITS
• High Gain gfs = 120,000 ,umho Typical
• Wide Dynamic Range • Low Intermodulation Distortion
c
W
oN
c
W
•N
c
W N N
ABSOLUTE MAXIMUM RATINGS (2S0C)
Gate·Drain or Gate·Source Voltage .-25 V Gate Current . 100 rnA Total Device Dissipation (25°C Case Temperature) .3 W Power Derating (to 150°C) ... 24 mWrC Storage Temperature Range .... -55 to +150°C Operating Temperature Range... -55 to +150°C Lead Temperature
(1/16" from case for 10 seconds) 300°C
TO-39 See Section 6
.~:
~
l s0
ELECTRICAL CHARACTERISTICS (2S0C unless otherwise noted)
Char.
Part Number |
U320 |
Manufacturers |
Siliconix |
Logo |
|
Description |
n-channel JFET |
Datasheet |
U320 Datasheet (PDF) |
n-channel JFETs
designed for • • •
• VHF BuRer Amplifiers • IF Amplifiers
-
H
Siliconix
- ---
-----
Performance Curves NIP See Section 4
BENEFITS
• High Gain gfs = 120,000 ,umho Typical
• Wide Dynamic Range • Low Intermodulation Distortion
c
W
oN
c
W
•N
c
W N N
ABSOLUTE MAXIMUM RATINGS (2S0C)
Gate·Drain or Gate·Source Voltage .-25 V Gate Current . 100 rnA Total Device Dissipation (25°C Case Temperature) .3 W Power Derating (to 150°C) ... 24 mWrC Storage Temperature Range .... -55 to +150°C Operating Temperature Range... -55 to +150°C Lead Temperature
(1/16" from case for 10 seconds) 300°C
TO-39 See Section 6
.~:
~
l s0
ELECTRICAL CHARACTERISTICS (2S0C unless otherwise noted)
Char.
n-channel JFET
n-channel JFETs
designed for • • •
• VHF BuRer Amplifiers • IF Amplifiers
-
H
Siliconix
- ---
-----
Performance Curves NIP See Section 4
BENEFITS
• High Gain gfs = 120,000 ,umho Typical
• Wide Dynamic Range • Low Intermodulation Distortion
c
W
oN
c
W
•N
c
W N N
ABSOLUTE MAXIMUM RATINGS (2S0C)
Gate·Drain or Gate·Source Voltage .-25 V Gate Current . 100 rnA Total Device Dissipation (25°C Case Temperature) .3 W Power Derating (to 150°C) ... 24 mWrC Storage Temperature Range .... -55 to +150°C Operating Temperature Range... -55 to +150°C Lead Temperature
(1/16" from case for 10 seconds) 300°C
TO-39 See Section 6
.~:
~
l s0
ELECTRICAL CHARACTERISTICS (2S0C unless otherwise noted)
Characteristic
U320
U321
U322
Umt
Min Typ Max Min Typ Max M,n Typ Max
rest Conditions
1 -I
I~ s
I";
4
T A
15 T
I6
I
e
I]
IGSS
VGSloffl BVGSS lOSS VGS(I) 'OS(on)
Gate Reverse Current (Note 1)
Gate-Source Cutoff Voltage Gate-Source Breakdown Voltage Saturation Drain Current (Note 21 Gate-Source Forward Voltage Drain-Source ON ReSistance
-2 -25 100
-3 -0 5 -10
500 1
10
8 9fs
1-
9 0 C1SS
I- V
10
N A
Crss
111 112 I':'::
M I
e
Cas Cgd
13 -en
Common-Source Forward Transconductance (Note 21
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Gate-Source Capacitance
Gate-Drain Capacitance
EqUivalent Short CirCUit Input NOise Voltage
75 120 200
30
15 1.
2019-09-21 : M3172 M3172F TMS664814 TMS626162A TMS626812 TMS626812A TMS626812B TMS664414 SN64S112 M955C