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Not Recommended For New Designs Features High-performance CMOS nonvolatile static RAM 8192 x 8 bit...
www.DataSheet4U.com
Not Recommended For New Designs Features High-performance
CMOS nonvolatile static RAM 8192 x 8 bits 25 ns Access Time 12 ns Output Enable Access Time ICC = 15 mA at 200 ns Cycle Time Automatic STORE to EEPROM on Power Down using external capacitor Hardware or Software initiated STORE (STORE Cycle Time < 10 ms) Automatic STORE Timing 105 STORE cycles to EEPROM 10 years data retention in EEPROM Automatic RECALL on Power Up Software RECALL Initiation (RECALL Cycle Time < 20 μs) Unlimited RECALL cycles from EEPROM Single 5 V ± 10 % Operation Operating temperature ranges: 0 to 70 °C -40 to 85 °C QS 9000 Quality Standard ESD characterization according MIL STD 883C M3015.7-HB (classification see IC Code Numbers) RoHS compliance and Pb- free Package: SOP28 (330 mil) Pin Configuration
VCAP A12 A7 A6 A5 A4 A3 A2 A1 A0 DQ0 DQ1 DQ2 VSS 1 2 3 4 5 6 7 8 9 10 11 12 13 14 28 27 26 25 24 23 22 VCCX W HSB A8 A9 A11 G A10 E DQ7 DQ6 DQ5 DQ4 DQ3
U632H64
PowerStore 8K x 8 nvSRAM
Description The U632H64 has two separate modes of operation: SRAM mode and nonvolatile mode. In SRAM mode, the memory operates as an ordinary static RAM. In nonvolatile operation, data is transferred in parallel from SRAM to EEPROM or from EEPROM to SRAM. In this mode SRAM functions are disabled. The U632H64 is a fast static RAM (25 ns), with a nonvolatile electrically erasable PROM (EEPROM) element incorporated in each static memory cell. The SRAM can be read and writ...