www.DataSheet4U.com
an
=y FE AMP
comDanv
RF MOSFET Power 100 - 500 MHz
Features
N-Channel Enhancement Mode Device DMOS...
www.DataSheet4U.com
an
=y FE AMP
comDanv
RF
MOSFET Power 100 - 500 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor
. .
Transistor,
4OW, 28V
UF284OP
Absolute Maximum Ratings at 25°C
Parameter Symbol Rating Units
i
D
i
627
i
6.33
1
247
1
257
1
H J
] 1
1.40 292
1 I
165 3.M
1 I
055 115
1 I
.D65 325
Electrical Characteristics
at 25°C
input Capacitance Output Capacitance Reverse Capacitance Power Gain Drain Efficiency Load Mismatch Tolerance
* Per Side
C ISS C oss C RSS GP
qD
-
)
45 30 a
pF pF PF dB % -
Vg28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0 V,,=28.0
V, F=l .O MHz’ V, F=l .O MHz’ V, F=l .O MHz’ V, 1,,=500.0 mA, P,fi40.0 V, 1,,=500.0 mA, Po,,=40.0 V, 1,,=500.0 mA, P,,g40.0 W. F=500 MHz W, F=500 MHz W, F=500 MHz
10 50 -
2O:l
VSWR-T
Specifications Subject to Change Without Notice.
MIA-COM,
Inc.
RF
MOSFET Power Transistor,
4OW, 28V
U F284OP
v2.00
Typical Broadband
Performance
Curves
CAPACITANCES
40
vs
VOLTAGE
50
POWER OUTPUT vs
VOLTAGE
P,,=3.0 W I,,=500 mA F=500 MHz
Fz1.0 MHz
g f L 2 5 10 55
4o 30
20
E
C RSS
10
/
0 15 "2, (") 20 25 30 5 10 15 20 25 30 35
5
10
v,, (“)
GAIN vs FREQUENCY
30
v.,,=28
EFFICIENCY
65 -
vs FREQUENCY
mA P,,,=40 W
V I,,=500
mA PO,,=40 W
V,,=28
V I,,=500
6 c kii 55.
c
J
100 200 3w 400 500
50
.
loo
200
3430
400
500
FREQUENCY
(MHz)
FREQUENCY
(MHz)
POWER OUTPUT
60
vs POWER INPUT
...
