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UF3C120040K4S Datasheet

Part Number UF3C120040K4S
Manufacturers UnitedSiC
Logo UnitedSiC
Description SiC Cascode
Datasheet UF3C120040K4S DatasheetUF3C120040K4S Datasheet (PDF)

1200V-35mW SiC Cascode DATASHEET UF3C120040K4S CASE CASE D (1) Rev. A, January 2019 Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive.

  UF3C120040K4S   UF3C120040K4S






SiC Cascode

1200V-35mW SiC Cascode DATASHEET UF3C120040K4S CASE CASE D (1) Rev. A, January 2019 Description United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive. Features 1 2 34 G (4) KS (3) S (2) w Typical on-resistance RDS(on),typ of 35mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms Typical applications Part Number UF3C120040K4S Package TO-247-4L Marking UF3C120040K4S w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UF3C120040K4S Rev. A, January 2019 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avalanche energy 3 Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 seconds 1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C Sym.


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