1200V-35mW SiC Cascode
DATASHEET
UF3C120040K4S
CASE
CASE D (1)
Rev. A, January 2019
Description
United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive.
SiC Cascode
1200V-35mW SiC Cascode
DATASHEET
UF3C120040K4S
CASE
CASE D (1)
Rev. A, January 2019
Description
United Silicon Carbide's cascode products co-package its highperformance F3 SiC fast JFETs with a cascode optimized MOSFET to produce the only standard gate drive SiC device in the market today. This series exhibits very fast switching using a 4-terminal TO-247package and the best reverse recovery characteristics of any device of similar ratings. These devices are excellent for switching inductive loads, and any application requiring standard gate drive.
Features
1 2 34
G (4) KS (3)
S (2)
w Typical on-resistance RDS(on),typ of 35mW w Maximum operating temperature of 175°C w Excellent reverse recovery w Low gate charge w Low intrinsic capacitance w ESD protected, HBM class 2 w TO-247-4L package for faster switching, clean gate waveforms
Typical applications
Part Number UF3C120040K4S
Package TO-247-4L
Marking UF3C120040K4S
w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating
Datasheet: UF3C120040K4S
Rev. A, January 2019
1
Maximum Ratings
Parameter Drain-source voltage Gate-source voltage
Continuous drain current 1
Pulsed drain current 2 Single pulsed avalanche energy 3 Power dissipation Maximum junction temperature Operating and storage temperature Max. lead temperature for soldering, 1/8” from case for 5 seconds
1. Limited by TJ,max 2. Pulse width tp limited by TJ,max 3. Starting TJ = 25°C
Sym.