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UFT30-28

Advanced Semiconductor

NPN SILICON RF POWER TRANSISTOR

UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Oper...


Advanced Semiconductor

UFT30-28

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Description
UFT30-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz. PACKAGE STYLE .380 4L FLG. B .112 x 45° A www.DataSheet4U.com FEATURES: PG = 7.0 dB min. at 25 W/400 MHz η D = 60 % Typical Omnigold™ Metalization System S G C D F E D S Ø.125 NOM. FULL R J .125 I GH MAXIMUM RATINGS ID VDDS VGS PDISS TJ TSTG θ JC O 5.0 A 65 V ±40 V 100 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 1.8 OC/W TC = 25 C O DIM A B C D E F G H I J MINIMUM inches / mm MAXIMUM inches / mm .220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64 .230 / 5.84 .730 / 18.54 .980 / 24.89 .385 / 9.78 .004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10 .006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48 O O O ORDER CODE: ASI10666 CHARACTERISTICS SYMBOL VDSS IDSS IGSS VGS GFS CISS COSS CRSS PG ηD VDS = 28 V VGS = 20 V VDS = 10 V VDS = 10 V NONETEST CONDITIONS IDS = 10 mA MINIMUM TYPICAL MAXIMUM 60 4.0 1.0 UNITS V mA µA V mMho ID = 25 mA ID = 500 mA 1.0 500 46 33 6.0 7.0 60 6.0 VDS = 28 V VGS = 0 V f = 1.0 MHz pF VDD = 28 V f = 400 MHz IDQ = 25 mA POUT = 25 W dB % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 ...




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