NPN SILICON RF POWER TRANSISTOR
UFT30-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The UFT30-28 is Designed for Class A and B Power Ampliifiers Oper...
Description
UFT30-28
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The UFT30-28 is Designed for Class A and B Power Ampliifiers Operating up to 500 MHz.
PACKAGE STYLE .380 4L FLG.
B .112 x 45° A
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FEATURES:
PG = 7.0 dB min. at 25 W/400 MHz η D = 60 % Typical Omnigold™ Metalization System
S G
C D F E
D S
Ø.125 NOM. FULL R J .125
I GH
MAXIMUM RATINGS
ID VDDS VGS PDISS TJ TSTG θ JC
O
5.0 A 65 V ±40 V 100 W @ TC = 25 OC -65 C to +200 C -65 C to +150 C 1.8 OC/W
TC = 25 C
O
DIM A B C D E F G H I J
MINIMUM
inches / mm
MAXIMUM
inches / mm
.220 / 5.59 .785 / 19.94 .720 / 18.29 .970 / 24.64
.230 / 5.84
.730 / 18.54 .980 / 24.89 .385 / 9.78
.004 / 0.10 .085 / 2.16 .160 / 4.06 .240 / 6.10
.006 / 0.15 .105 / 2.67 .180 / 4.57 .280 / 7.11 .255 / 6.48
O
O
O
ORDER CODE: ASI10666
CHARACTERISTICS
SYMBOL
VDSS IDSS IGSS VGS GFS CISS COSS CRSS PG ηD VDS = 28 V VGS = 20 V VDS = 10 V VDS = 10 V
NONETEST CONDITIONS
IDS = 10 mA
MINIMUM TYPICAL MAXIMUM
60 4.0 1.0
UNITS
V mA µA V mMho
ID = 25 mA ID = 500 mA
1.0 500 46 33 6.0 7.0 60
6.0
VDS = 28 V
VGS = 0 V
f = 1.0 MHz
pF
VDD = 28 V f = 400 MHz
IDQ = 25 mA
POUT = 25 W
dB %
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE NORTH HOLLYWOOD, CA 91605 (818) 982-1200 FAX (818) 765-3004
Specifications are subject to change without notice.
REV. A
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