UGF18060

UGF18060 60W, 1.8 GHz, 26V Broadband RF Power N-Channel Enhancement-Mode Lateral MOSFET Designed for DCS base station applications in the frequency band 1.805 to 1.88 GHz. Rated with a minimum output power of 60W. It is ideal for CDMA, TDMA, WCDMA, GSM, and Multi-Carrier Power Amplifiers in Class AB operation. ALL GOLD metal system for highest reliability Industry standard package Suggested alternative to the MRF18060 Internally matched for repeatable manufacturing High gain, high efficiency and high linearity Application Specific Performance, 1.88 GHz GSM: 60 Watts 12.5 dB EDGE: 25 Watts 12.5 dB IS95 CDMA: 7.5 Watts 12.5 dB CDMA2000: TBD Watts 12.5 dB Package Type 440171 PN: UGF18060F Package Type 440172 PN: UGF18060P Rev 2. UGF18060 UGF18060 Maximum Ratings Rating Drain to Source Voltage, Gate connected to Source Gate to Source Voltage Total Device Dissipation @ Tcase = 60oC Derate above 60oC Storage Temperature Range Operating Junction Temperature Symbol VDSS VGSS PD Tstg TJ Value 65 +15 to –0.5 65 0.83 -65 to +150 200 Unit Volts Volts Watts W/oC oC oC Thermal Characteristics Characteristic Thermal Resistance, Junction to Case Symbol ΘJC Typical - Unit oC/W Electrical DC Characteristics (TC =25°C unless otherwise specified) Rating Symbol Min Drain to Source Breakdown Voltage (VGS=0, ID=1mA) Drain to Source Leakage current (VDS=26V, VGS=0) Gate to Source Leakage current (VGS=15V, VDS=0) Threshold Voltage (VDS=10V, ID=1mA) Gate Quies...