UJ4C075033K4S

DATASHEET UJ4C075033K4S CASE CASE D (1) 750V-33mW SiC FET Rev. B, July 2021 Description The UJ4C075033K4S is a 750V, 33mW G4 SiC FET. It is based on a unique ‘cascode’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si superjunction devices. Available in the TO-247-4L package, this device exhibits ultra-low gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads and any application requiring standard gate drive. 1 2 34 Part Number UJ4C075033K4S G (4) KS (3) Package TO-247-4L Features S (2) Marking UJ4C075033K4S w On-resistance RDS(on): 33mW (typ) w Operating temperature: 175°C (max) w Excellent reverse recovery: Qrr = 88nC w Low body diode VFSD: 1.26V w Low gate charge: QG = 37.8nC w Threshold voltage VG(th): 4.8V (typ) allowing 0 to 15V drive w Low intrinsic capacitance w ESD protected: HBM class 2 and CDM class C3 w TO-247-4L package for faster switching, clean gate waveforms Typical applications w EV charging w PV inverters w Switch mode power supplies w Power factor correction modules w Motor drives w Induction heating Datasheet: UJ4C075033K4S Rev. B, July 2021 1 Maximum Ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current 1 Pulsed drain current 2 Single pulsed avalanche ene...