DatasheetsPDF.com

UK3018

UTC

2.5V DRIVE SILICON N-CHANNEL MOSFET

UNISONIC TECHNOLOGIES CO., LTD UK3018 2.5V DRIVE SILICON N-CHANNEL MOSFET  DESCRIPTION The UTC UK3018 is a Silicon N-ch...


UTC

UK3018

File Download Download UK3018 Datasheet


Description
UNISONIC TECHNOLOGIES CO., LTD UK3018 2.5V DRIVE SILICON N-CHANNEL MOSFET  DESCRIPTION The UTC UK3018 is a Silicon N-channel MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low voltage and low current applications such as small servo motor controllers, power MOSFET gate drivers, and other switching applications.  FEATURES * Min VDSS =30V * RDS(ON) ≤ 8.0 Ω @ VGS=4.0V, ID=10mA RDS(ON) ≤ 13 Ω @ VGS=2.5V, ID=1.0mA * Pulsed ID=400mA * Low voltage drive (2.5V)  SYMBOL 3.Drain Power MOSFET 1.Gate 2.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UK3018L-AE2-R UK3018G-AE2-R UK3018L-AL3-R UK3018G-AL3-R UK3018L-AN3-R UK3018G-AN3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23-3 SOT-323 SOT-523 Pin Assignment 1 2 3 G S D G S D G S D Packing Tape Reel Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2022 Unisonic Technologies Co., Ltd 1 of 6 QW-R502-313.G UK3018 Power MOSFET  ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS 30 V VGSS +20 -12 V V Drain Current Continuous ID Pulsed (Note 2) IDP SOT-23-3 Power Dissipation (Note 3) SOT-323 PD 100 mA 400 mA 200 mW SOT-523 150 mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum r...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)