UNISONIC TECHNOLOGIES CO., LTD
UK3018
2.5V DRIVE SILICON N-CHANNEL MOSFET
DESCRIPTION
The UTC UK3018 is a Silicon N-ch...
UNISONIC TECHNOLOGIES CO., LTD
UK3018
2.5V DRIVE SILICON N-CHANNEL
MOSFET
DESCRIPTION
The UTC UK3018 is a Silicon N-channel
MOSFET, designed to minimize on-state resistance while it provides rugged, reliable and fast switching performance. The product is particularly suited for low
voltage and low current applications such as small servo motor controllers, power
MOSFET gate drivers, and other switching applications.
FEATURES
* Min VDSS =30V * RDS(ON) ≤ 8.0 Ω @ VGS=4.0V, ID=10mA
RDS(ON) ≤ 13 Ω @ VGS=2.5V, ID=1.0mA * Pulsed ID=400mA * Low
voltage drive (2.5V)
SYMBOL
3.Drain
Power
MOSFET
1.Gate
2.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UK3018L-AE2-R
UK3018G-AE2-R
UK3018L-AL3-R
UK3018G-AL3-R
UK3018L-AN3-R
UK3018G-AN3-R
Note: Pin Assignment: G: Gate S: Source D: Drain
Package
SOT-23-3 SOT-323 SOT-523
Pin Assignment
1
2
3
G
S
D
G
S
D
G
S
D
Packing
Tape Reel Tape Reel Tape Reel
MARKING
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1 of 6
QW-R502-313.G
UK3018
Power
MOSFET
ABSOLUTE MAXIMUM RATING (TA=25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source
Voltage Gate-Source
Voltage
VDSS
30
V
VGSS
+20 -12
V V
Drain Current
Continuous
ID
Pulsed (Note 2)
IDP
SOT-23-3 Power Dissipation (Note 3) SOT-323
PD
100
mA
400
mA
200
mW
SOT-523
150
mW
Junction Temperature
TJ
+150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum r...