UNISONIC TECHNOLOGIES CO., LTD UK3919
SWITCHING N-CHANNEL POWER MOSFET
Power MOSFET
DESCRIPTION
This UK3919 N-Channe...
UNISONIC TECHNOLOGIES CO., LTD UK3919
SWITCHING N-CHANNEL POWER
MOSFET
Power
MOSFET
DESCRIPTION
This UK3919 N-Channel Logic Level
MOSFET is produced using UTC Semiconductor advanced Power Trench process which has been tailored to make the on-state resistance minimum and yet maintain low gate charge for superior switching performance especially.
The UK3919 is well suited for where low in-line power loss is needed in a very small outline surface mount package, such as low
voltage and battery powered applications.
FEATURES
* RDS(ON) = 5.6mΩ @VGS = 10 V * Low capacitance * Optimized gate charge * Fast switching capability * Avalanche energy specified
SYMBOL
2.Drain
*Pb-free plating product number:UK3919L
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Normal
Lead Free Plating
UK3919-TN3-R
UK3919L-TN3-R
UK3919-TN3-T
UK3919L-TN3-T
Package
TO-252 TO-252
Pin Assignment 123 GDS GDS
Packing
Tape Reel Tube
www.unisonic.com.tw Copyright © 2008 Unisonic Technologies Co., Ltd
1 of 6
QW-R502-200.A
UK3919
Power
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain to Source
Voltage
VDSS 25 V
Gate to Source
Voltage
VGSS ±20 V
Continuous Drain Current Pulsed Drain Current (Note1)
ID ±64 A
IDM
±256
A
Single Avalanche Current (Note2)
IAS 27 A
Single Avalanche Energy (Note2) Total Power Dissipation Storage Temperature
EAS PD TSTG
73 36 -55 ~ +150
mJ W ℃
Note: Absolute maximum ratings are t...