This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP04979
Silicon N-channel MOSFET ...
This product complies with the RoHS Directive (EU 2002/95/EC).
Composite Transistors
UP04979
Silicon N-channel
MOSFET (Tr1) Silicon P-channel
MOSFET (Tr2)
For switching
(0.30) 654
0.20+–00..0025
Unit: mm
0.10±0.02
1.20±0.05 1.60±0.05
(0.20)
(0.20) /
Product0ltiof0e.0c2yclennuaen
■ Features High-speed switching Gate protection diode built-in Two elements incorporated into one package
(Each transistor is separated) Reduction of the mounting area and assembly cost by one half
■ Basic Part Number 2SJ0672 + 2SK3539
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Tr1 Drain-source surrender
voltage
VDSS
50
Gate-source
voltage (Drain open)
VGSO
±7
Drain current
Peak drain current Tr2 Drain-source surrender
voltage
ID IDP VDSS
100 200 −30
Gate-source
voltage (Drain open)
VGSO
±7
Overall
Drain current Peak drain current Total power dissipation * Junction temperature Storage temperature
ID −100 IDP −200 PT 125 Tch 1...
