UP1496

UNISONIC TECHNOLOGIES CO., LTD UP1496 Preliminary PNP SILICON TRANSISTOR PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR „ DESCRIPTION The UTC UP1496 are series of PNP silicon planar transistors which have gain of 500 at IC=100mA. It can be used in such applications like battery powered circuits and darlington replacements. 3 1 2 SOT-23 „ ORDERING INFORMATION Ordering Number UP1496G-AE3-R Package SOT-23 Pin Assignment 123 EBC Packing Tape Reel „ MARKING U96G www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 3 QW-R206-095.b UP1496 Preliminary PNP SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -220 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage Collector Current VEBO IC -5 V -0.3 A Peak Pulse Current ICM -1 A Base Current Collector Dissipation (Ta=25°С) IB PC -200 500 mA mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (Ta=25°С, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=-100 µA Collector-Emitter Breakdown Voltage BVCEO IC=-10 mA (Note) Emitter-Base Breakdown Voltage BVEBO IE =-100 µA Collector Cutoff Current ICBO VCB=-200...