UP1853

UNISONIC TECHNOLOGIES CO., LTD UP1853 PNP SILICON TRANSISTOR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS  FEATURES * 5A Continuous Current , up to 10A peak current * Very Low Saturation Voltages * Excellent Gain Characteristics Specified up to 10A * PD = 3W  ORDERING INFORMATION Ordering Number UP1853G-AA3-R Package SOT-223 Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 4 QW-R207-019.D UP1853 PNP SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage Collector-Emitter Voltage VCBO VCEO -140 -100 V V Emitter-Base Voltage Peak Pulse Current VEBO ICM -6 -10 V A Continuous Collector Current Power Dissipation (TA=25°C) IC -5 A PD 3 W Junction Temperature Storage Temperature TJ TSTG +150 -55~+150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  ELECTRICAL CHARACTERISTICS (TA= 25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC=-100μ A Collector-Emitter Breakdown Voltage BVCER IC=-1μA, RB≦1KΩ Collector-Emitter Breakdown Voltage BVCEO IC=-10mA (Note) Emitter-Base Breakdown Voltage BVEBO IE=-100μA Collector Cut-Off Current ICBO VCB=-100V Collector Cut-Off Current ICER VCB=-100V, R≤1kΩ Emitter Cut-Off Curr...