UP1855

UNISONIC TECHNOLOGIES CO., LTD UP1855 PNP SILICON TRANSISTOR HIGH CURRENT TRANSISTOR  FEATURES * High current switching * Low VCE(SAT) * High hFE 1 SOT-223  ORDERING INFORMATION Ordering Number Package UP1855G-x-AA3-R SOT-223 Note: Pin Assignment: E: Emitter B: Base C: Case Pin Assignment 123 BCE Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 4 QW-R207-011.H UP1855 PNP SILICON TRANSISTOR  ABSOLUATE MAXIUM RATINGS (TA= 25C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -180 V Collector-Emitter Voltage VCEO -140 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current ICM -10 A Continuous Collector Current IC -4 A Power Dissipation (Ta = 25C ) (Note 2) PD 3W Junction Temperature TJ +150 C Storage Temperature TSTG -40 ~ +150 C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 4 square inch minimum  ELECTRICAL CHARACTERISTICS (TA= 25C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage BVCBO IC = -100µA Collector-Emitter Breakdown Voltage BVCEO IC = -10mA Emitter-Base Breakdown Voltage BVEBO IE = -100µA (Note) ...