UP1856

UNISONIC TECHNOLOGIES CO., LTD UP1856 PNP SILICON TRANSISTOR HIGH CURRENT TRANSISTOR „ FEATURES * High current switching * Low VCE(SAT) * High hFE „ ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP1856L-AA3-R UP1856G-AA3-R Package SOT-223 Pin Assignment 123 BCE Packing Tape Reel www.unisonic.com.tw Copyright © 2012 Unisonic Technologies Co., Ltd 1 of 3 QW-R207-014.D UP1856 PNP SILICON TRANSISTOR „ ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -220 V Collector-Emitter Voltage VCEO -200 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current IC(PEAK) -5 A Continuous Collector Current IC -2 A Power Dissipation at Ta=25°C PD 1W Junction Temperature TJ +150 °C Storage Temperature TSTG -40 ~ +150 °C Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Emitter Breakdown Voltage BVCEO IC= -10mA, IB=0 (Note) Collector-Base Breakdown Voltage BVCBO IC= -0.1mA, IE=0 Emitter-Base Breakdown Voltage BVEBO IE= -0.1mA, IC=0 Collector-Emitter Saturation Voltage (Note) IC= -100mA, IB= -10mA VCE(SAT) IC= -1A, IB= -100mA IC= -2A, IB=-400mA Base-Emitter Saturation Voltage VBE(SAT) IC=-2A, IB=-400mA Base-Emitter Turn-On Voltage VBE(ON) V...