UP1868

UNISONIC TECHNOLOGIES CO., LTD UP1868 LOW SATURATION VOLTAGE PNP POWER TRANSISTOR „ FEATURES PNP SILICON TRANSISTOR * Low saturation voltage with equivalent on-resistance be RCE(SAT) about 40mΩ at 5A) * High gain that can be replace parts for power MOSFET. *Pb-free plating product number: UP1868L „ ORDERING INFORMATION Order Number Normal Lead Free Plating UP1868-AA3-F-R UP1868L-AA3-F-R Package SOT-223 www.DataSheet4U.com Pin Assignment 1 2 3 B C E Packing Tape Reel www.unisonic.com.tw Copyright © 2005 Unisonic Technologies Co., Ltd 1 of 4 QW-R207-015,A UP1868 „ ABSOLUTE MAXIMUM RATINGS (Ta=25℃) PNP SILICON TRANSISTOR PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -15 V Collector-Emitter Voltage VCEO -12 V Emitter-Base Voltage VEBO -6 V Peak Pulse Current IC(PEAK) -20 A Continuous Collector Current IC -6 A Power Dissipation PC 3 W Junction Temperature TJ +150 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Note Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ ELECTRICAL CHARACTERISTICS (at Ta = 25℃ unless otherwise specified) PARAMETER MIN -15 -12 -6 MAX UNIT V V V -55 -100 mV -132 -160 mV -440 mV -1050 -1200 mV -950 -1050 mV -10 nA -1.0 µA -10 nA 1000 TYP SYMBOL TEST CONDITIONS BVCBO IC=-100µA Breakdown Voltage (Note) BVCEO IC=-10mA BVEBO IE=-100µA IC=-500mA,IB=-5mA Collector-Emitter Saturation Voltage VCE(SAT) I...