UP2003

UNISONIC TECHNOLOGIES CO., LTD UP2003 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Power MOSFET  DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON)<35 mΩ @ VGS =-4.5 V, ID =-7 A * RDS(ON)<20 mΩ @ VGS =-10 V, ID =-9 A  SYMBOL  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UP2003L-TN3-R UP2003G-TN3-R Package TO-252 Pin Assignment 1 2 3 G D S Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 5 QW-R502-202.C UP2003 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain Source Voltage Gate Source voltage VDSS -25 V VGSS ±20 V Continuous Drain Current Pulsed Drain Current (Note 1) ID IDM -9 -36 A Power Dissipation PD 2.5 W Junction Temperature Storage Temperature TJ TSTG +150 -55 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL DATA PARAMETER Junction-to-Ambient Junction-to-Case SYMBOL θJA θJC MIN TYP  ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) MAX 50 25 UNIT °C/W °C/W PARAMETER SYMBOL TEST CONDITIONS O...