UP2518

UNISONIC TECHNOLOGIES CO., LTD UP2518 LOW VCE(SAT) PNP SILICON POWER TRANSISTORS PNP TRANSISTOR  FEATURES * Extremely low collector-emitter saturation voltage VCE(SAT) and corresponding extremely low equivalent on-resistance RCE(SAT) (97mΩ at 1.5A) * High collector current capability(1.5A) * High peak pulse current up to 6A * High collector current gain  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package UP2518L-AE3-R UP2518G-AE3-R SOT-23 Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BEC Packing Tape Reel  MARKING Y18 L: Lead Free G: Halogen Free www.unisonic.com.tw Copyright © 2016 Unisonic Technologies Co., Ltd 1 of 4 QW-R206-083.C UP2518 PNP TRANSISTOR  ABSOLUTE MAXIMUM RATING (TA= 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Collector-Base Voltage VCBO -20 V Collector-Emitter Voltage Emitter-Base Voltage VCEO VEBO -20 -5 V V Peak Pulse Current (Note 2) Continuous Collector Current IPEAK IC -6 -1.5 A A Base Current Power Dissipation (Note 3) TA=25°C IB PD -500 625 mA mW Junction Temperature TJ +150 °С Storage Temperature TSTG -55 ~ +150 °С Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Pulse width=300µs. Duty cycle≤2%. 3. Assume the device is mounted and measured on a ceramic substrate15x15x0.6mm.  ...