UPA3753GR

μPA3753GR MOS FIELD EFFECT TRANSISTOR Data Sheet R07DS0758EJ0100 Rev.1.00 May 25, 2012 Description The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application. Features Dual chip type Low on-state resistance ⎯ RDS(on) = 56 mΩ MAX. (VGS = 10 V, ID = 2.5 A) ⎯ RDS(on) = 72 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) Low gate charge ⎯ QG = 13.4 nC TYP. (VGS = 10 V) Small and surface mount package (Power SOP8) Ordering Information Part No. μPA3753GR-E1-AT *1 μPA3753GR-E2-AT *1 Lead Plating Pure Sn (Tin) Packing Tape 2500 p/reel Package Power SOP8 0.08 g TYP. Note: *1. Pb-Free (This product does not contain Pb in the external electrode and other parts.) “-E1”,”-E2” indicates the unit orientation. Absolute Maximum Ratings (TA = 25°C) Item Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) *1 Total Power Dissipation (1unit) *2 Total Power Dissipation (2units) *2 Channel Temperature Storage Temperature Single Avalanche Current *3 Single Avalanche Energy *3 Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch TSTG IAS EAS Ratings 60 ±20 ±5.0 ±20 0.85 1.12 150 −55 to +150 5.0 2.5 Notes: *1. PW ≤ 10 μs, Duty Cycle ≤ 1% *2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt *3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH Unit V V A A W W °C °C A mJ R07DS0758EJ0100 Rev.1.00 May 25, 2012 Page 1 of 6 μPA3753GR Chapter Title Electrical Characteristics ...