μPA3753GR
MOS FIELD EFFECT TRANSISTOR
Data Sheet
R07DS0758EJ0100 Rev.1.00
May 25, 2012
Description
The μPA3753GR is Du...
μPA3753GR
MOS FIELD EFFECT TRANSISTOR
Data Sheet
R07DS0758EJ0100 Rev.1.00
May 25, 2012
Description
The μPA3753GR is Dual N-channel MOS Field Effect Transistors designed for switching application.
Features
Dual chip type Low on-state resistance
⎯ RDS(on) = 56 mΩ MAX. (VGS = 10 V, ID = 2.5 A) ⎯ RDS(on) = 72 mΩ MAX. (VGS = 4.5 V, ID = 2.5 A) Low gate charge ⎯ QG = 13.4 nC TYP. (VGS = 10 V) Small and surface mount package (Power SOP8)
Ordering Information
Part No. μPA3753GR-E1-AT *1 μPA3753GR-E2-AT *1
Lead Plating Pure Sn (Tin)
Packing Tape 2500 p/reel
Package Power SOP8 0.08 g TYP.
Note: *1. Pb-Free (This product does not contain Pb in the external electrode and other parts.) “-E1”,”-E2” indicates the unit orientation.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source
Voltage (VGS = 0 V)
Gate to Source
Voltage (VDS = 0 V)
Drain Current (DC) Drain Current (pulse) *1 Total Power Dissipation (1unit) *2 Total Power Dissipation (2units) *2
Channel Temperature
Storage Temperature Single Avalanche Current *3 Single Avalanche Energy *3
Symbol VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch TSTG IAS EAS
Ratings 60 ±20 ±5.0 ±20 0.85 1.12 150
−55 to +150 5.0 2.5
Notes: *1. PW ≤ 10 μs, Duty Cycle ≤ 1% *2. Mounted on glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt *3. Starting Tch = 25°C, VDD = 30 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
Unit V V A A W W °C °C A mJ
R07DS0758EJ0100 Rev.1.00 May 25, 2012
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μPA3753GR
Chapter Title
Electrical Characteristics ...