UPC2712T

UPC2709T, UPC2712T 2.5 GHz SILICON MMIC WIDE-BAND AMPLIFIER Gain, DISCONTIN GsU (dB) ED FEATURES WIDE FREQUENCY RESPONSE: 2.5 GHz HIGH GAIN: 23 dB (UPC2709T) SATURATED OUTPUT POWER: +11.5 dBm (UPC2709T) INTERNAL CURRENT REGULATION MINIMIZES GAIN CHANGE OVER TEMPERATURE 5 V SINGLE SUPPLY VOLTAGE SUPER SMALL PACKAGE TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION NEC's UPC2709T and UPC2712T are Silicon Monolithic integrated circuits manufactured using the NESAT III process. These devices are suitable as buffer amplifiers for wide-band applications. They are designed for low cost gain stages in cellular radios, GPS receivers, DBS tuners, PCN, and test/ measurement equipment. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. GAIN vs. FREQUENCY 30 25 20 UPC2712 15 UPC2709 10 0 0.5 1.0 1.5 2.0 2.5 3.0 Frequency, f (GHz) ELECTRICAL CHARACTERISTICS (TA = 25°C, f = 1 GHz, VCC = 5 V) SYMBOLS PART NUMBER PACKAGE OUTLINE PARAMETERS AND CONDITIONS UNITS ICC GS fU ∆GS PSAT P1dB NF RLIN Circuit Current (no signal) Small Signal Gain Upper Limit Operating Frequency (The gain at fU is 3 dB down from the gain at 0.1 GHz) Gain Flatness, f = 0.1 ~ 1.8 GHz f = 0.1 ~ 2.0 GHz Saturated Output Power Output Power at 1 dB Compression Point Noise Figure Input Return Loss mA dB GHz dB dBm dBm dB dB RLOUT ISOL ∆GT RTH Output Return Loss Isolation Gain -Temperature Coefficient Thermal Resistance (Junction to Ambient) ...