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UPC817 PHOTOCOUPLER Datasheet PDF

4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER

 

 

 

Part Number UPC817
Description 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER
Feature UNISONIC TECHNOLOGIES CO.
, LTD UPC817 4 PIN DIP PHOTOTRANSISTOR PHOTOCOUPLER P HOTOCOUPLER  DESCRIPTION The UTC UP C817 is a 4 pin DIP phototransistor pho tocoupler, it uses UTC’s advanced tec hnology to provide the customers with h igh isolation voltage between input and output, etc.
The UTC UPC817 is suitabl e for programmable controllers and tele communication equipments, etc.
 FEAT URES * High isolation voltage between i nput and output * Creepage distance > 7 .
62 mm  SYMBOL (1) (4) (2) (3) DIP- 4 DIP-4M SMD-4 DIP-4C LSOP-4 SMD-4C ORDERING INFORMATION Ordering Numbe r Lead Free Halogen Fr .
Manufacture UTC
Datasheet
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UPC817

 

 

 


 

 

 

Part Number UPC8179TK
Description SILICON MMIC LOW CURRENT AMPLIFIER
Feature DATA SHEET BIPOLAR ANALOG INTEGRATED CIR CUIT µPC8179TK SILICON MMIC LOW CURRE NT AMPLIFIER FOR MOBILE COMMUNICATIONS DESCRIPTION The µPC8179TK is a silico n monolithic integrated circuit designe d as amplifier for mobile communication s.
This IC can realize low current cons umption with external chip inductor whi ch can not be realized on internal 50 wide band matched IC.
µPC8179TK ado pts 6-pin lead-less minimold package us ing same chip as the conventional µPC8 179TB in 6-pin super minimold.
TK suffi x IC which is smaller package than TB s uffix IC contributes to reduce mounting space by 50%.
This .
Manufacture Renesas
Datasheet
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UPC8179TK

 

 

 


 

 

 

Part Number UPC8179TK
Description SILICON MMIC LOW CURRENT AMPLIFIER FOR MOBILE COMMUNICATIONS
Feature SILICON MMIC LOW CURRENT AMPLIFIER UPC81 79TK FOR MOBILE COMMUNICATIONS FEATURES
• HIGH DENSITY SURFACE MOUNTING: 6 P in Leadless Minimold Package (1.
5 x 1.
1 x 0.
55 mm)
• SUPPLY VOLTAGE: VCC = 2 .
4 to 3.
3 V
• HIGH EFFICIENCY: PO(1dB ) = +2.
0 dBm TYP at f = 1.
0 GHz PO(1dB) = +0.
5 dBm TYP at f = 1.
9 GHz PO(1dB) = +0.
5 dBm TYP at f = 2.
4 GHz
• POWER GAIN: GP = 13.
5 dB TYP at f = 1.
0 GHz GP = 15.
5 dB TYP at f = 1.
9 GHz GP = 16 .
0 dB TYP at f = 2.
4 GHz
• EXCELLENT ISOLATION: ISL = 43 dB TYP at f = 1.
0 G Hz ISL = 42 dB TYP at f = 1.
9 GHz ISL = 42 dB TYP at f = 2.
4 GHz
• LOW CURRE NT CONSUMPTION: ICC = 4.
0 .
Manufacture NEC
Datasheet
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