Lateral DMOS. UPF1080 Datasheet

UPF1080 Datasheet PDF


Part Number

UPF1080

Description

Broadband RF Power N-Channel Enhancement-Mode Lateral DMOS

Manufacture

CREE

Total Page 10 Pages
Datasheet
Download UPF1080 Datasheet



UPF1080
UPF1080
80W, 1.0 GHz, 26V Broadband RF Power N-Channel
Enhancement-Mode Lateral MOSFET
This device is designed for base station applications up to frequencies of 1.0 GHz. Rater with
a minimum output power of 80W, it is ideal for CDMA, TDMA, GSM, FM, Single or Multi-
Carrier Power Amplifiers in Class A or AB operation.
www.DataSheet4U.com
ALL GOLD metal system for highest reliability.
Industry standard package.
Low intermodulation distortion of –30dBc at 80W (PEP).
Package Type 440095
PN: UPF1080F
Package Type 440134
PN: UPF1080P
Page 1 of 10
UPF1080 Rev. 2

UPF1080
UPF1080
Maximum Ratings
Rating
Drain to Source Voltage, gate connected to source
Gate to Source Voltage
Total Device Dissipation @ Tcase = 70oC
Derate above 70oC
Storage Temperature Range
Operating Junction Temperature
www.DataSheet4U.com
Thermal Characteristics
Characteristics
Thermal Resistance, Junction to Case
Symbol
BVDSS
BVGSS
PD
TSTG
TJ
Value
65
+/- 20
118
0.9
-65 to +150
200
Unit
Volts
Volts
Watts
W/oC
oC
oC
Symbol
Θjc
Typical
1.1
Unit
oC/W
Electrical DC Characteristics (TC =25°C unless otherwise specified)
Rating
Symbol
Min
Drain to Source Voltage, gate connected to source
(VGS = 0, IDS = 1mA)
Drain to Source Leakage current
(VDS = 28V, VGS = 0)
Gate to Source Leakage current
(VGS = 20V, VDS = 0)
Threshold Voltage
(VDS = 10V, IDS = 1mA)
Gate Quiescent Voltage
(VDS = 26 V, IDS = 500mA)
Drain to Source On Voltage
(VGS = 10V, IDS = 1A
Forward Transconductance
(VDS = 10V, ID = 5A)
BVDSS
IDSS
IGSS
VTH
VGS(on)
VDS(on)
GM
65
-
-
2.0
3.0
-
2.0
Typ
-
-
-
3.1
4.0
0.13
3.0
Max Unit
- Volts
1.0 mA
1.0 µA
5.0 Volts
6.0 Volts
- Volts
-S
Page 2 of 10
UPF1080 Rev. 2




@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)