CHANNEL MOSFET. UPF1N100 Datasheet

UPF1N100 Datasheet PDF


Part Number

UPF1N100

Description

SURFACE MOUNT N . CHANNEL MOSFET

Manufacture

Microsemi Corporation

Total Page 2 Pages
Datasheet
Download UPF1N100 Datasheet



UPF1N100
580 Pleasant Street
Watertown, MA 02472
Phone:(617) 926-0404
F A X : (617) 924-1235
Features
Rugged POWERMITE 3Surface Mount Package
Low On-State Resistance
Avalanche and Surge Rated
High Frequency Switching
Ultra Low Leakage current
UIS rated
Available with Lot Acceptance Testing
Description
This device is an N-Channel enhancement mode, high density MOSFET.
It is passivated with 4 um (40 kA) of oxynitride, and supplied in a three
leaded package.
UPF1N100
SURFACE MOUNT
N – CHANNEL
MOSFET
Maximum Ratings
PARAMETER
SYMBOL VALUE
Drain-to-Source Voltage
VDSS
1000
Gate- to -Source Voltage
VGS +/- 20
Continuous Drain Current @ TC = 25°C
ID1 1.0
Continuous Drain Current @ TC=100°C
ID2 0.27
Avalanche Current
IAR 1.0
Repetitive Avalanche Energy
EAR 3.5
Single Pulse Avalanche Energy
EAS 120
Operating & Storage Junction Temperature Range TJ, TSTG - 40 to +125
Steady-state Thermal Resistance, Junction-to-Tab RθJ-TAB
2.5
UNIT
Volts
Volts
Amps
Amps
Amps
mJ
mJ
°C
°C/Watt
Static Electrical Characteristics
SYMBOL
CHARACTERISTICS / TEST CONDITIONS
BVDSS
VGS(TH)2
VGS(TH)1
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Gate Threshold Voltage
(VGS=0V, ID=0.25mA)
(VGS=VDS, ID=1mA, TJ=37°C )
(VGS=VDS, ID=1mA, TJ=25°C )
RDS(ON)1
RDS(ON)2
RDS(ON)3
RDS(ON)4
Drain to Source ON-State Resistance (VGS=10V, ID=ID 1 , TJ=25°C )
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=37°C)
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=25°C)
Drain to Source ON-State Resistance (VGS=7V, ID=5…150ma, TJ=60°C)
RDS(ON)5
IDSS1
IDSS2
IGSS1
Drain to Source ON-State Resistance (VGS=7V, ID=ID 1 , TJ=125°C )
Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ= 25°C )
Zero Gate Voltage-Drain Current (VDS=80%BVDSS,VGS=0V,TJ=125°C )
Gate to Source Leakage Current (VGS= ±20V, VDS=0V, TJ = 25°C )
IGSS2 Gate to Source Leakage Current
IGSS3 Gate to Source Leakage Current
(VGS= ±20V, VDS=0V, TJ = 37°C )
(VGS= ±20V, VDS=0V, TJ=125°C )
MIN
1000
2
TYP
3.4
3.5
12.5
12.5
11.5
15.0
25.5
10.0
MAX UNIT
Volts
Volts
4.5 Volts
13.5 Ohms
Ohms
Ohms
Ohms
Ohms
25 uA
250 uA
±100 nA
nA
25 uA
MSC 04-28-00
PRELIMINARY

UPF1N100
UPF1N100
Dynamic Electrical Characteristics
SYMBOL
Ciss
Coss
Crss
Qg
Qgs
Qgd
td (on)
tr
td
tf
td (on)
tr
td (off)
tf
VSD
t rr
Qrr
CHARACTERISTIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
TEST CONDITIONS
MIN TYP MAX UNIT
VGS= 0 V
VDS= 25 V
f = 1MHZ
VGS= 10 V
VDS= 0.5 VDSS
IC= 20 mA
Resistive Switching (25°C)
290 375 pF
36 50 pF
15 30 pF
20 nC
1.0 nC
10 nC
6.3 ns
VGS= 10 V, VDS= 0.5 BVDSS 5.9 ns
ID = 20 mA
315 ns
Rg = 1.6
2.6 us
Resistive Switching (25°C) 6.3 ns
VGS= 10 V, VDS= 0.5 BVDSS 5.8 ns
ID = 100 mA
76 ns
Rg = 1.6
470 ns
VGS= 0 V, IS = 1 A, TJ = 37°C
IS = 1 A, dIs/dt = 100 A/us
IS = 1 A, dIs/dt = 100 A/us
0.825
121
0.415
1.0
300
0.8
V
ns
uC
MSC 04-28-00
PRELIMINARY
MECHANICAL SPECIFICATIONS




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