AMPLIFIER CHIP. UPG110P Datasheet

UPG110P Datasheet PDF


Part Number

UPG110P

Description

2 to 8 GHz WIDE BAND AMPLIFIER CHIP

Manufacture

NEC

Total Page 8 Pages
Datasheet
Download UPG110P Datasheet



UPG110P
DATA SHEET
GaAs INTEGRATED CIRCUIT
µPG110P
2 to 8 GHz WIDE BAND AMPLIFIER CHIP
DESCRIPTION
The µPG110P is a GaAs monolithic integrated circuit designed as a wide band amplifier from 2 to 8 GHz. And
the device is available in chip form. The µPG110P is suitable for the gain stage required high gain characteristic of
the microwave communication system and the measurement equipment.
FEATURES
• Ultra wide band : 2 to 8 GHz
• High Power Gain : GP = 15 dB TYP.
@f = 2 to 8 GHz
• Medium Power : PO(1 dB) = +14 dBm TYP. @f = 2 to 8 GHz
ORDERING INFORMATION
PART NUMBER
µPG110P
FORM
Chip
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
Supply Voltage
Input Voltage
Input Power
Total Power Dissipation
Operating Temperature
Storage Temperature
VDD
VIN
Pin
Ptot*1
Topr*2
Tstg
+10
–5 to +0.6
+10
1.5
–65 to +125
–65 to +125
V
V
dBm
W
°C
°C
*1 Mounted with AuSn hard solder
*2 The temperature of base material beside the chip
RECOMMENDED OPERATING CONDITIONS (TA = 25 °C)
Supply Voltage
Input Power
VDD
Pin
+8 ± 0.2
–5
V
dBm
Document No. P11882EJ2V0DS00 (2nd edition)
(Previous No. ID-2454)
Date Published September 1996 P
Printed in Japan
© 1989

UPG110P
µPG110P
ELECTRICAL CHARACTERISTICS (TA = 25 °C)*3
CHARACTERISTIC
Supply Current
Power Gain
Gain Flatness
Input Return Loss
Output Return Loss
Isolation
Output Power at 1 dB
Gain Compression Point
SYMBOL
IDD
GP
GP
RLin
RLout
ISL
PO(1 dB)
MIN.
65
12
6
7
30
10
TYP.
135
15
10
10
40
14
MAX.
180
±1.5
UNIT
mA
dB
dB
dB
dB
dB
dBm
TEST CONDITIONS
VDD = +8 V
f = 2 to 8 GHz
*3 These characteristics are based on performance of devices mounted in the standard package shown in Fig. 1.
Fig. 1 4 pin Ceramic Package
Top View
4.5 MAX.
0.6
± 0.06
4.1 MIN.
2




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