L-BAND 4 W HIGH POWER SPDT SWITCH
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GaAs INTEGRATED CIRCUIT
UPG2155TB
NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH
DESCRIPTION
The µPG2155...
Description
www.DataSheet4U.com
GaAs INTEGRATED CIRCUIT
UPG2155TB
NEC’s L-BAND 4 W HIGH POWER SPDT SWITCH
DESCRIPTION
The µPG2155TB is an L-band SPDT GaAs FET switch developed for digital cellular or cordless telephone applications. The device can operate from 500 MHz to 2.5 GHz, with low insertion loss and high linearity.
FEATURES
Low insertion loss : LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz : LINS = 0.40 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz : LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.5 GHz High linearity : 2f0 = 70 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm : 3f0 = 75 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm 6-pin super minimold package (2.1 × 2.0 × 0.9 mm)
APPLICATION
GSM Triple/Quad band digital cellular
ORDERING INFORMATION
Part Number Order Number Package Marking G4R Supplying Form Embossed tape 8 mm wide Pin 4, 5, 6 face the perforation side of the tape Qty 3 kpcs/reel
µPG2155TB-E4
µPG2155TB-E4-A 6-pin super minimold
(Pb-Free)
Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: µPG2155TB-A
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10583EJ01V0DS (1st edition) Date Published November 2005 CP(K)
© NEC Compound Semiconductor Devices, Ltd. 2005
UPG2155TB
PIN CONNECTIONS
(Top View)
1 2 3 6 5 4 6 5 4
(Bottom View)
1 2 3
Pin No. 1 2 3 4 5 6
Pin Name OUT1 GND OUT2 Vcont2 IN Vc...
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