1.5V Drive Nch+Pch MOSFET
US6M11
zStructure Silicon N-channel MOSFET / Silicon P-channel MOSFET
zDimensions (Unit : mm...
1.5V Drive Nch+Pch
MOSFET
US6M11
zStructure Silicon N-channel
MOSFET / Silicon P-channel
MOSFET
zDimensions (Unit : mm)
TUMT6 SOT-363T
0.2Max.
zFeatures 1) Nch
MOSFET and Pch
MOSFET are put in TUMT6 package. 2) Low on-resistance. 3) Low
voltage drive (1.5V drive). 4) Built-in G-S Protection Diode.
Abbreviated symbol : M11
zApplications Switching
zInner circuit
(6) (5)
(4)
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
US6M11
Taping TR 3000
∗1
∗2
∗1
(1) (2)
∗1 ESD PROTECTION DIODE ∗2 BODY DIODE
(3)
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source
voltage Gate-source
voltage
Drain current
Source current (Body diode)
Continuous Pulsed Continuous Pulsed
Power dissipation
Channel temperature
Range of storage temperature
∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board.
Symbol
VDSS VGSS
ID IDP ∗1 IS ISP ∗1
PD ∗2
Tch Tstg
Limits Tr1 : Nchannel Tr2 : Pchannel
Unit
20 −12 V
±10 ±10
V
±1.5 ±1.3
A
±6 ±5.2 A
0.5 −0.5 A
6
−5.2
A
1.0 W / TOTAL
0.7 W / ELEMENT 150 °C
−55 to +150
°C
∗2
(1) Tr1 (Nch) Source (2) Tr1 (Nch) Gate (3) Tr2 (Pch) Drain (4) Tr2 (Pch) Source (5) Tr2 (Pch) Gate (6) Tr1 (Nch) Drain
zThermal resistance
Parameter Channel to ambient
∗ Mounted on a ceramic board
Symbol Rth(ch-a) ∗
Limits 125 179
Unit °C/W / TOTAL °C/W / ELEMENT
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1/7
2009.07 - Rev.A
US6M11
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Gate-...
