UT3400

UNISONIC TECHNOLOGIES CO., LTD UT3400 5.8A, 30V N-CHANNEL ENHANCEMENT MODE POWER MOSFET  DESCRIPTION The UTC UT3400 is an N-ch enhancement MOSFET providing the customers with perfect RDS(ON) and low gate charge. This device can be operated with 2.5V low gate voltage. The UTC UT3400 is optimized for applications, such as a load switch or in PWM.  FEATURES * RDS(ON) ≤ 28mΩ @ VGS=10V, ID=5.8A RDS(ON) ≤ 33mΩ @ VGS=4.5V, ID=5.0A RDS(ON) ≤ 52mΩ @ VGS=2.5V, ID=4.0A  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3400L-AE3-R UT3400G-AE3-R Note: Pin Assignment: G: Gate S: Source D: Drain Package SOT-23 Pin Assignment 123 GSD Packing Tape Reel  MARKING www.unisonic.com.tw Copyright © 2010 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-371.A UT3400 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDS 30 V Gate-Source Voltage Continuous Drain Current VGS ±12 V ID 5.8 A Pulsed Drain Current (Note 2) Power Dissipation IDM PD 30 A 1.4 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by maximum junction temperature. 3. Pulse width ≤300μs, duty cycle≤0.5%.  THERMAL CHAR...