UT3414

UNISONIC TECHNOLOGIES CO., LTD UT3414 N-CHANNEL ENHANCEMENT MODE  DESCRIPTION The UT3414 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) ≤ 50mΩ @ VGS=4.5V, ID=4.2A * RDS(ON) ≤ 63mΩ @ VGS=2.5V, ID=3.7A * RDS(ON) ≤ 87mΩ @ VGS=1.8V, ID=3.2A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number Lead Free Halogen Free UT3414L-AE2-R UT3414G-AE2-R UT3414L-AE3-R UT3414G-AE3-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-23-3 SOT-23 Pin Assignment 1 2 3 G S D G S D Packing Tape Reel Tape Reel  MARKING www.unisonic.com.tw Copyright © 2023 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-248.I UT3414 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 20 V Gate-Source Voltage VGSS ±8 V Continuous Drain Current ID 4.2 A Pulsed Drain Current IDM 15 A Power Dissipation SOT-23-3 SOT-23 PD 0.5 W 0.6 W Junction Temperature TJ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not impl...