UNISONIC TECHNOLOGIES CO., LTD UT3416-H
6.7A, 20V N-CHANNEL MOSFET
Power MOSFET
DESCRIPTION
The UTC UT3416-H is an N...
UNISONIC TECHNOLOGIES CO., LTD UT3416-H
6.7A, 20V N-CHANNEL
MOSFET
Power
MOSFET
DESCRIPTION
The UTC UT3416-H is an N-Channel
MOSFET, it uses UTC’s advanced technology to provide customers with a minimum on-state resistance and high switching speed, etc.
The UTC UT3416-H is suitable for high efficiency fast switching applications.
FEATURES
* RDS(ON)<19mΩ @ VGS=4.5V, ID=4A * High switching speed * Improved dv/dt capability
SYMBOL
ORDERING INFORMATION
Ordering Number UT3416G-AE2-R Note: Pin Assignment: G: Gate D: Drain
S: Source
Package SOT-23-3
Packing Tape Reel
MARKING
www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd
1 of 5
QW-R208-052.A
UT3416-H
Power
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise noted)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source
Voltage
VDSS
20 V
Gate-Source
Voltage Drain Current
Continuous
TC=25°C TC=100°C
Pulsed (Note 1)
VGSS ID IDM
±10 V 6.7 A 4.2 A 26.8 A
Power Dissipation
TC=25°C Derate above 25°C
PD
1.56 0.012
W W/°C
Junction Temperature Storage Temperature Range
TJ TSTG
-55~+150 -55~+150
°C °C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL CHARACTERISTICS
PARAMETER Junction to Ambient
SYMBOL θJA
RATINGS 80
ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted)
UNIT °C/W
PARAMETER
SYMBOL
TEST CONDITI...
