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UT3443

Unisonic Technologies

Power MOSFET

UNISONIC TECHNOLOGIES CO., LTD UT3443 P-CHANNEL 2.5-V (G-S) MOSFET  DESCRIPTION The UTC UT3443 is a P-channel power MOS...


Unisonic Technologies

UT3443

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Description
UNISONIC TECHNOLOGIES CO., LTD UT3443 P-CHANNEL 2.5-V (G-S) MOSFET  DESCRIPTION The UTC UT3443 is a P-channel power MOSFET using UTC’s advanced trench technology to provide customers with a minimum on-state resistance and extremal low gate charge with a 12V gate rating.  FEATURES * VDS(V)= -20V * ID=-4.5A *RDS(ON) < 100mΩ @VGS = -2.5V, RDS(ON) < 65mΩ @VGS = -4.5V  SYMBOL Power MOSFET  ORDERING INFORMATION Ordering Number UT3443G-AG6-R Note: Pin Assignment: G: Gate D: Drain S: Source Package SOT-26 Pin Assignment 123456 Packing D D G S D D Tape Reel  MARKING 654 CD3G 123 www.unisonic.com.tw Copyright © 2015 Unisonic Technologies Co., Ltd 1 of 3 QW-R502-557.B UT3443 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage VDSS -20 V VGSS ±12 V Drain Current Continuous TA=25°C TJ =150°C (Note 2) TA=70°C ID -4.5 A -3.6 A Pulsed Power Dissipation (Note 2) TA=25°C IDM PD -20 A 1.1 W Junction Temperature Storage Temperature TJ TSTG +150 -55~+150 °C °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied.  THERMAL CHARACTERISTICS PARAMETER Junction to Ambient Note: Surface Mounted on FR4 Board, t≤5 sec SYMBOL θJA RATINGS 110 UNIT °C/W  ELECTRICAL CHARACTERISTICS (TJ=25°C, unless otherwise noted) PARAMET...




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