UTC-111

Thin-Film Cascadable Amplifier 10 to 100 MHz Technical Data UTO/UTC 111 Series Features Frequency Range: 10 to 100 MHz Low Noise: 1.4 dB (Typ) Medium Power: 16.8 dBm (Typ) Temperature Compensated Applications Low Frequency IF Stages Medical Instruments: Ultra-Sound, Magnetic Resonance High Efficiency or Battery Powered Systems Description The 111 Series is a single-stage, high-gain silicon bipolar amplifier that incorporates thin-film technology. Low noise figure and high efficiency are the result of an output transformer coupling design. Active bias circuits provide temperature compensation and increased immunity to bias voltage variations. Blocking capacitors couple the RF through the amplifier, while a low VSWR is maintained through unique transformer designs. The 111 Series is available in either the TO-8 hermetic package or the connectored TC-1 package. Pin Configuration UTO—TO-8T GROUND RFIN RFOUT V+ UTC—TC-1 CASE GROUND RF IN RFOUT V+ Schematic V+ RFIN Maximum Ratings Parameter DC Voltage Continuous RF Input Power Operating Case Temperature RFOUT Storage Temperature “R” Series Burn-In Temperature Thermal Characteristics1 θJC Active Transistor Power Dissipation Junction Temperature Above Case Temperature MTBF (MIL-HDBK-217E, AUF @ 90°C) Maximum 17 Volts +13 dBm –55 to +125°C –62 to +150°C +125°C 105°C/W 110 mW 12°C 848,400 Hrs. Weight: (typical) UTO — 2.1 grams; UTC — 21.5 grams 2 Electrical Specifications (Measured in 50 Ω system @ +15 VDC ...