UTD484

UNISONIC TECHNOLOGIES CO., LTD UTD484 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  DESCRIPTION The UTD484 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications.  FEATURES * RDS(ON) < 15mΩ @ VGS =10 V, ID =20 A * Low capacitance * Low gate charge * Fast switching capability * Avalanche energy specified  SYMBOL 2.Drain Power MOSFET 1.Gate 3.Source  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package Pin Assignment 12345678 Packing UTD484L-TN3-T UTD484G-TN3-T TO-252 G D S - - - - - Tube UTD484L-TN3-R UTD484G-TN3-R TO-252 G D S - - - - - Tape Reel - UTD484G-K08-3030-R DFN-8(3×3) S S S G D D D D Tape Reel Note: Pin Assignment: G: Gate D: Drain S: Source www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-207.E UTD484  MARKING TO-252 Power MOSFET DFN-8(3×3) UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 2 of 8 QW-R502-207.E UTD484 Power MOSFET  ABSOLUTE MAXIMUM RATINGS (TA = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage Continuous Drain Current TC=25°C VGSS ID ±20 25 V A Pulsed Drain Current(Note 1) Avalanche Current(Note 1) IDM 80 A IAR 15 A Repetitive avalanche energy L=0.3mH(Note 1) TC=25°C TO-252 DFN-8(3×3) EAR 33 mJ 41 Power Dissipation TA=25°C TO-252 DFN-8(3×3) (N...