UNISONIC TECHNOLOGIES CO., LTD UTN3055
12A, 25V N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UTC UTN3055 is N-channel lo...
UNISONIC TECHNOLOGIES CO., LTD UTN3055
12A, 25V N-CHANNEL ENHANCEMENT MODE
DESCRIPTION
The UTC UTN3055 is N-channel logic level enhancement mode field effect transistor.
SYMBOL
2.Drain
Power
MOSFET
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UTN3055L-TN3-R
UTN3055G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package TO-252
Pin Assignment
1
2
3
GDS
Packing Tape Reel
MARKING
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1 of 5
QW-R502-138.C
UTN3055
Power
MOSFET
ABSOLUTE MAXIMUM RATINGS (TC=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current Pulsed Drain Current (Note 1) Repetitive Avalanche Energy (L=0.05mH, Duty Cycle≦1%)
VDSS VGSS
ID IDM
EAR
25
V
±20
V
12
A
45
A
3
mJ
Power Dissipation
PD
43
W
Junction Temperature
TJ
+150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER Junction-to-Ambient Junction-to-Case
SYMBOL θJA θJC
RATINGS 60 2.6
ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified)
UNIT °C/W °C/W
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS Drain-Source Breakdown
Voltage Drain-Source Leakage Current Gate-Source Leakage ...
