UTT6N10Z

SMD Type TrManOsSisFtoErTs N-Channel Power MOSFET UTT6N10Z ■ Features ● RDS(on) 80mΩ @VGS = 10V,ID=6A ● High Switching Speed ● Low Crss (Typically 3.1pF) ● Low Gate Charge (Typically 4.3nC) SOT-223 6.50±0.2 3.00±0.1 4 10 Unit:mm 7.0±0.3 3.50±0.2 0.75 (min) 2.Drain 1.Gate 3.Source 1.80 (max) 0.02 ~ 0.1 1.6 ± 0.1 123 2.30 (typ) 4.60 (typ) 0.84 (max) 0.66 (min) 0.250 Gauge Plane 1.Gate 2.Drain 3.Source 4.Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Single Pulsed Avalanche Energy (Note1) Power Dissipation Thermal Resistance.Junction- to-Ambient Thermal Resistance.Junction- to-Case Junction Temperature Storage Temperature Range Note1: Starting TJ=25°C, L=11mH, IAS =6A, VDD=90V, VGS =10V. Symbol VDS VGS ID IDM EAS PD RthJA RthJC TJ Tstg Rating 100 ±20 6 24 12 2.2 55 12 150 -55 to 150 Unit V A mJ W ℃/W ℃ www.kexin.com.cn 1 SMD Type TrManOsSisFtoErTs N-Channel Power MOSFET UTT6N10Z ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Maximum Body-Diode Continuous Current Source Current Pulsed Diode Forward Voltage Symbol VDSS IDSS I...