www.vishay.com
V10PN50-M3
Vishay General Semiconductor
High Current Density Surface Mount TMBS® (Trench MOS Barrier Sc...
www.vishay.com
V10PN50-M3
Vishay General Semiconductor
High Current Density Surface Mount TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.30 V at IF = 5 A
eSMP® Series
K
1 2
SMPC (TO-277A)
K Cathode
Anode 1 Anode 2
DESIGN SUPPORT TOOLS click logo to get started
FEATURES Very low profile - typical height of 1.1 mm Ideal for automated placement Trench MOS Schottky technology Low forward
voltage drop, low power losses High efficiency operation Meets MSL level 1, per J-STD-020, LF maximum peak of
260 °C Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS For use in low
voltage high frequency DC/DC converters, freewheeling, and polarity protection applications.
Models
Available
PRIMARY CHARACTERISTICS
IF(AV) VRRM IFSM VF at IF = 10 A TJ max. Package
10 A 50 V 180 A 0.40 V 150 °C SMPC (TO-277A)
Circuit configuration
Single
MECHANICAL DATA
Case: SMPC (TO-277A) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant, and commercial grade
Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 M3 suffix meets JESD 201 class 1A whisker test
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
Device marking code
Maximum repetitive peak reverse
voltage
Maximum average forward rectified current (fig. 1)
Maximum DC reverse
voltage Peak forward surge current 10 ms single half sine-wave superimposed ...